50RIA120S90 Vishay, 50RIA120S90 Datasheet - Page 6

• Manufacturer Part Number: 50RIA120S90
• Description: SILICON CONTROLLED RECTIFIER,1.2kV V(DRM),50A I(T),TO-208AC
• Manufacturer: Vishay

Specifications of 50RIA120S90

• Breakover Current Ibo Max: 1490 A
• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 15 mA
• Forward Voltage Drop: 1.6 V
• Gate Trigger Voltage (vgt): 2.5 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 100 mA
• Holding Current (ih Max): 200 mA
• Mounting Style: Stud
• Package / Case: TO-65
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

50RIA Series
Vishay High Power Products
ORDERING INFORMATION TABLE
www.vishay.com
6
Dimensions
Device code
0.01
100
0.1
0.1
10
0.001
1
0.001
1
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
<=30% rated di/dt : 20V, 65 ohms
tr<=1 µs
Steady State Value
R
rated di/dt : 20V, 30 ohms; tr<=0.5 µs
VGD
thJ-hs
For technical questions, contact: [e-mail]
IGD
= 0.35 K/W
0.01
1
2
3
4
5
Fig. 8 - Thermal Impedance Z
50
Medium Power Thyristors
LINKS TO RELATED DOCUMENTS
1
0.01
(Stud Version), 50 A
-
-
-
-
-
RIA
0.1
Fig. 9 - Gate Characteristics
(b)
Instantaneous Gate Current (A)
Square Wave Pulse Duration (s)
2
Current code
Essential part number
Voltage code x 10 = V
Critical dV/dt:
None = 500 V/µs (standard value)
S90 = 1000 V/µs (special selection)
None = Stud base TO-208AC (TO-65) 1/4" 28UNF-2A
M = Stud base TO-208AC (TO-65) M6 x 1
120
3
50RIA Series
(a)
0.1
1
50RIA Series
S90
4
thJC
Frequency Limited by PG(AV)
Characteristics
10
(1) PGM = 10W, tp = 5ms
(2) PGM = 20W, tp = 2.5ms
(3) PGM = 50W, tp = 1ms
(4) PGM = 100W, tp = 500µs
(1) (2)
M
RRM
5
http://www.vishay.com/doc?95334
(see Voltage Ratings table)
1
(3) (4)
100
1000
10
Document Number: 93711
Revision: 19-Sep-08