3N248-E4/45 Vishay, 3N248-E4/45 Datasheet - Page 3
![BRIDGE RECTIFIER,1-PHASE FULL-WAVE,200V V(RRM),SIP](/photos/5/21/52187/2kbp10m_sml.jpg)
3N248-E4/45
Manufacturer Part Number
3N248-E4/45
Description
BRIDGE RECTIFIER,1-PHASE FULL-WAVE,200V V(RRM),SIP
Manufacturer
Vishay
Specifications of 3N248-E4/45
Voltage - Peak Reverse (max)
200V
Current - Dc Forward (if)
1.5A
Diode Type
Single Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
4-SIP (KBPM)
Product
Single Phase Bridge
Peak Reverse Voltage
200 V
Maximum Rms Reverse Voltage
140 V
Max Surge Current
60 A
Forward Voltage Drop
1.3 V
Maximum Reverse Leakage Current
5 uA
Maximum Operating Temperature
+ 150 C
Length
15.24 mm
Width
5.08 mm
Height
11.68 mm
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Phase Type
Single Phase
Number Of Elements
1
Peak Rep Rev Volt
200V
Rms Voltage (max)
140V
Peak Non-repetitive Surge Current (max)
60A
Avg. Forward Curr (max)
1.5@Ta=40CA
Rev Curr
5uA
Forward Voltage
1.3V
Package Type
Case KBPM
Operating Temp Range
-55C to 150C
Pin Count
4
Mounting
Through Hole
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Compliant
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88531
Revision: 15-Apr-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
100
0.01
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0.4
0
T
Pulse Width = 300 µs
1 % Duty Cycle
Percent of Rated Peak Reverse Voltage (%)
J
= 25 °C
0.6
Instantaneous Forward Voltage (V)
20
T
0.8
J
= 25 °C
40
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
T
1.0
J
For technical questions within your region, please contact one of the following:
= 100 °C
T
J
= 125 °C
60
1.2
0.180 (4.57)
0.200 (5.08)
0.028 (0.76)
0.034 (0.86)
0.125 x 45°
DIA.
Polarity shown on front side of case: positive lead by beveled corner
(3.2)
80
1.4
(15.2)
KBP005M thru KBP10M, 3N246 thru 3N252
0.60
MIN.
1.6
100
0.600 (15.24)
0.560 (14.22)
Case Style KBPM
(1.52)
0.060
0.160 (4.1)
0.140 (3.6)
0.50 (12.7) MIN.
0.460 (11.68)
0.420 (10.67)
100
10
0.105 (2.67)
0.085 (2.16)
1
Figure 5. Typical Junction Capacitance Per Diode
0.1
Vishay General Semiconductor
0.460 (11.68)
0.500 (12.70)
Reverse Voltage (V)
1
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
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100
3