2N5462-E3 Vishay, 2N5462-E3 Datasheet - Page 4
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2N5462-E3
Manufacturer Part Number
2N5462-E3
Description
TRANSISTOR,JFET,P-Channel,16mA I(DSS),TO-92
Manufacturer
Vishay
Specifications of 2N5462-E3
Channel Type
P
Configuration
Single
Drain-gate Voltage (max)
40V
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-226AA
Breakdown Voltage Vbr
40V
Gate-source Cutoff Voltage Vgs(off) Max
9V
Power Dissipation Pd
350mW
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Continuous Drain Current Id
-16mA
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
2N/SST5460 Series
Vishay Siliconix
www.vishay.com
9-4
1000
800
600
400
200
–5
–4
–3
–2
–1
0
5
4
3
2
1
0
0
–0.1
0
0
Transconductance vs. Gate-Source Voltage
V
V
T
GS(off)
A
GS(off)
T
T
125_C
= 25_C
A
A
On-Resistance vs. Drain Current
= –55_C
= –55_C
0.4
V
0.4
= 1.5 V
= 1.5 V
GS(off)
V
V
Transfer Characteristics
GS
GS
I
D
– Gate-Source Voltage (V)
25_C
– Gate-Source Voltage (V)
= 1.5 V
25_C
– Drain Current (mA)
0.8
0.8
125_C
3 V
–1
1.2
1.2
4 V
V
V
f = 1 kHz
DS
DS
= –15 V
= –15 V
1.6
1.6
_
–10
2
2
100 pA
0.1 pA
10 p A
10 nA
1 nA
1 pA
–10
–8
–6
–4
–2
0
5
4
3
2
1
0
0
0
0
Transconductance vs. Gate-Source Voltage
V
V
125_C
T
I
GS(off)
A
GS(off)
GSS
T
= 25_C
T
A
A
125_C
= 125_C
@ 125_C
= –55_C
–10
T
= 3 V
= 3 V
A
1
1
V
= –55_C
V
Transfer Characteristics
V
GS
GS
Gate Leakage Current
DG
– Gate-Source Voltage (V)
– Gate-Source Voltage (V)
25_C
– Drain-Gate Voltage (V)
25_C
–5 mA
–20
2
2
–1 mA
–5 mA
–30
S-04030—Rev. D, 04-Jun-01
3
3
Document Number: 70262
V
V
f = 1 kHz
DS
I
DS
GSS
= –15 V
= –15 V
–40
@ 25_C
–0.1 mA
4
4
–50
5
5