2N5460-E3 Vishay, 2N5460-E3 Datasheet - Page 4

• Manufacturer Part Number: 2N5460-E3
• Description: TRANSISTOR,JFET,P-Channel,5mA I(DSS),TO-92
• Manufacturer: Vishay

Specifications of 2N5460-E3

• Channel Type: P
• Configuration: Single
• Drain-gate Voltage (max): 40V
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-226AA
• Breakdown Voltage Vbr: 40V
• Gate-source Cutoff Voltage Vgs(off) Max: 6V
• Power Dissipation Pd: 350mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Continuous Drain Current Id: -5mA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2N/SST5460 Series
Vishay Siliconix
www.vishay.com
9-4
1000
800
600
400
200
–5
–4
–3
–2
–1
0
5
4
3
2
1
0
0
–0.1
0
0
Transconductance vs. Gate-Source Voltage
V
V
T
GS(off)
A
GS(off)
T
T
125_C
= 25_C
A
A
On-Resistance vs. Drain Current
= –55_C
= –55_C
0.4
V
0.4
= 1.5 V
= 1.5 V
GS(off)
V
V
Transfer Characteristics
GS
GS
I
D
– Gate-Source Voltage (V)
25_C
– Gate-Source Voltage (V)
= 1.5 V
25_C
– Drain Current (mA)
0.8
0.8
125_C
3 V
–1
1.2
1.2
4 V
V
V
f = 1 kHz
DS
DS
= –15 V
= –15 V
1.6
1.6
_
–10
2
2
100 pA
0.1 pA
10 p A
10 nA
1 nA
1 pA
–10
–8
–6
–4
–2
0
5
4
3
2
1
0
0
0
0
Transconductance vs. Gate-Source Voltage
V
V
125_C
T
I
GS(off)
A
GS(off)
GSS
T
= 25_C
T
A
A
125_C
= 125_C
@ 125_C
= –55_C
–10
T
= 3 V
= 3 V
A
1
1
V
= –55_C
V
Transfer Characteristics
V
GS
GS
Gate Leakage Current
DG
– Gate-Source Voltage (V)
– Gate-Source Voltage (V)
25_C
– Drain-Gate Voltage (V)
25_C
–5 mA
–20
2
2
–1 mA
–5 mA
–30
S-04030—Rev. D, 04-Jun-01
3
3
Document Number: 70262
V
V
f = 1 kHz
DS
I
DS
GSS
= –15 V
= –15 V
–40
@ 25_C
–0.1 mA
4
4
–50
5
5