2N3904-AP Micro Commercial Components (MCC), 2N3904-AP Datasheet - Page 2

• Manufacturer Part Number: 2N3904-AP
• Description: 200mA, 40V 600mW NPN Transistor, TO-92 / AMMO
• Manufacturer: Micro Commercial Components (MCC)
• Type: Amplifier, Medium Powerr

Specifications of 2N3904-AP

• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 600mW
• Frequency - Transition: 250MHz
• Mounting Type: Through Hole
• Package / Case: TO-92
• Current, Collector: 200 mA
• Current, Gain: 100
• Frequency: 250 MHz
• Package Type: TO-92
• Polarity: NPN
• Power Dissipation: 600 mW
• Primary Type: Si
• Voltage, Breakdown, Collector To Emitter: 40 V
• Voltage, Collector To Base: 60 V
• Voltage, Collector To Emitter: 40 V
• Voltage, Collector To Emitter, Saturation: 0.4 V
• Voltage, Emitter To Base: 6 V
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 40V
• Power Dissipation Pd: 600mW
• Dc Collector Current: 200mA
• Dc Current Gain Hfe: 30
• No. Of Pins: 3
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: RoHS Compliant part
• Other names: 2N3904-APTB

•
Features
•
•
Electrical Characteristics @ 25°C Unless Otherwise Specified
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL-SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
*Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Micro Commercial Components
V
V
V
I
I
h
V
V
f
C
C
NF
t
t
t
t
BL
CEX
T
d
r
s
f
Symbol
FE
Compliant. See ordering information)
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
Lead Free Finish/Rohs Compliant ("P"Suffix designates
obo
ibo
Through Hole Package
Capable of 600mWatts of Power Dissipation and 200mA Ic.
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL rating 1
Marking:Type number
M C C
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
DC Current Gain*
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance
Input Capacitance
(V
(I
f=10Hz to 15.7kHz)
Base-Emitter Saturation Voltage
Noise Figure
Delay Time
Rise Time
Storage Time
Fall Time
C
(I
(I
(I
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(V
BE
=100µAdc, V
C
C
E
C
C
C
C
C
C
C
C
C
C
=1.0mAdc, I
=10µAdc, I
=10µAdc, I
CE
CE
=0.1mAdc, V
=1.0mAdc, V
=10mAdc, V
=50mAdc, V
=100mAdc, V
=10mAdc, I
=50mAdc, I
=10mAdc, I
=50mAdc, I
=10mAdc, V
CB
=0.5Vdc, I
=30Vdc, V
=30Vdc, V
=5.0Vdec, I
C
Parameter
C
E
=0, f=1.0MHz)
CE
B
B
B
B
=0)
=0)
B
BE
BE
CE
CE
CE
=1.0mAdc)
=5.0mAdc)
=1.0mAdc)
=5.0mAdc)
CE
CE
=0)
E
=5.0Vdc, R
CE
(V
I
(V
I
=3.0Vdc)
=3.0Vdc)
=0, f=1.0MHz)
=1.0Vdc)
=1.0Vdc)
=20Vdc, f=100MHz)
C
B1
=1.0Vdc)
=1.0Vdc)
=1.0Vdc)
=10mAdc, I
CC
CC
=I
=3.0Vdc, V
=3.0Vdc, I
B2
=1.0mAdc)
TM
S
=1.0kΩ
B1
C
=1.0mAdc)
BE
=10mAdc
=0.5Vdc
0.65
Min
100
6.0
250
40
60
40
70
60
30
Max
0.85
0.95
300
200
0.2
0.4
4.0
8.0
5.0
50
50
35
35
50
1 of 5
Units
nAdc
nAdc
MHz
Vdc
Vdc
Vdc
Vdc
Vdc
pF
pF
dB
ns
ns
ns
ns
DIM
C
D
G
A
B
E
Purpose Amplifier
INCHES
.170
.170
.550
.010
.130
.010
MIN
NPN General
A
G
2N3904
D
MAX
.190
.190
.590
.020
.160
.104
TO-92
DIMENSIONS
13.97
4.33
4.30
0.36
3.30
2.44
MIN
MM
C
B
C B
14.97
MAX
4.83
4.83
0.56
3.96
2.64
E
E
NOTE