1N5617GP-E3/54 Vishay, 1N5617GP-E3/54 Datasheet - Page 3

1A,400V,150NS,FS,SUPERECT,DO15

1N5617GP-E3/54

Manufacturer Part Number
1N5617GP-E3/54
Description
1A,400V,150NS,FS,SUPERECT,DO15
Manufacturer
Vishay
Datasheet

Specifications of 1N5617GP-E3/54

Voltage - Forward (vf) (max) @ If
1.2V @ 1A
Voltage - Dc Reverse (vr) (max)
400V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
500nA @ 400V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
150ns
Mounting Type
Through Hole
Package / Case
DO-204AC, DO-15, Axial
Product
Switching Diodes
Peak Reverse Voltage
400 V
Forward Continuous Current
1 A
Max Surge Current
50 A
Configuration
Single
Recovery Time
150 ns
Forward Voltage Drop
1.2 V
Maximum Reverse Leakage Current
0.5 uA
Operating Temperature Range
- 65 C to + 175 C
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88522
Revision: 15-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.01
0.01
100
Fig. 3 - Typical Instantaneous Forward Characteristics
0.1
0.1
10
10
1
1
0.4
0
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
0.6
Instantaneous Forward Voltage (V)
20
0.8
40
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
1.0
Pulse Width = 300 μs
1 % Duty Cycle
T
60
J
= 25 °C
1.2
T
T
T
J
J
J
80
= 125 °C
= 75 °C
= 25 °C
1.4
This datasheet is subject to change without notice.
100
1.6
0.300 (7.6)
0.230 (5.8)
1.0 (25.4)
1.0 (25.4)
MIN.
MIN.
DO-204AC (DO-15)
0.034 (0.86)
0.028 (0.71)
0.140 (3.6)
0.104 (2.6)
DIA.
DIA.
100
100
0.1
10
10
1
1
0.01
1
DiodesEurope@vishay.com
Fig. 6 - Typical Transient Thermal Impedance
1N5615GP thru 1N5623GP
Vishay General Semiconductor
Fig. 5 - Typical Junction Capacitance
0.1
t - Pulse Duration (s)
Reverse Voltage (V)
10
1
www.vishay.com/doc?91000
V
sig
f = 1.0 MHz
T
10
J
= 50 mV
= 25 °C
www.vishay.com
p-p
100
100
3

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