VS-GB75YF120UT Vishay, VS-GB75YF120UT Datasheet - Page 6

• Manufacturer Part Number: VS-GB75YF120UT
• Description: IGBT,4 PACK,1200V,75A,ECONO2
• Manufacturer: Vishay

Specifications of VS-GB75YF120UT

• Module Configuration: Quad
• Transistor Polarity: NPN
• Dc Collector Current: 100A
• Collector Emitter Voltage Vces: 3.8V
• Power Dissipation Max: 480W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case: RoHS Compliant
• Transistor Case Style: Module
• No. Of Pins: 33
• Rohs Compliant: Yes

GB75YF120UT
Vishay High Power Products
www.vishay.com
6
100
120
100
80
60
40
20
80
60
40
20
0
0
400
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
Fig. 18 - Typical Diode I
Fig. 17 - Typical Diode I
1E-005
0.0001
800
V
0.001
0.01
CC
0.1
1
1E-006
= 600 V; I
T
dI
J
F
= 125 °C
D = 0.50
/ dt (A/ μs)
1200
I
5 ohm
F
(A)
Fig. 21 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
0.02
F
= 75 A
0.01
0.20
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
27 ohm
RR
0.05
1600
RR
For technical questions, contact:
vs. dI
47 ohm
0.10
vs. I
F
F
/dt
2000
0.0001
IGBT Fourpack Module, 75 A
t
1
, Rectangular Pulse Duration (sec)
0.001
[e-mail]
0.01
100
16
14
12
10
80
60
40
20
0
8
6
4
2
0
0
0
Fig. 20 - Typical Gate Charge vs. V
0.1
Fig. 19 - Typical Diode I
100
10
Q
I
CE
T
G
200
J
, Total Gate Charge (nC)
= 125 °C; I
= 5.0 A; L = 600 μH
1
20
300
R
G
(Ω)
400
F
30
= 75 A
typical value
10
Document Number: 93172
500
RR
vs. R
40
600
Revision: 13-Jan-10
g
GE
700
50