VS-15ETH06SPBF Vishay, VS-15ETH06SPBF Datasheet - Page 6

• Manufacturer Part Number: VS-15ETH06SPBF
• Description: DIODE, HYPERFAST RECTIFIER, 15A, 600V
• Manufacturer: Vishay

Specifications of VS-15ETH06SPBF

• Diode Type: Fast Recovery
• Repetitive Reverse Voltage Vrrm Max: 600V
• Forward Current If(av): 15mA
• Forward Voltage Vf Max: 2.1V
• Reverse Recovery Time Trr Max: 30ns
• Forward Surge Current Ifsm: RoHS Compliant

15ETH06SPbF/15ETH06-1PbF
Vishay High Power Products
DIMENSIONS in millimeters (inches)
L1
L2
www.vishay.com
6
D
A
Conforms to JEDEC
outline D
SYMBOL
m1
A1
D1
E1
b1
b2
c1
c2
L1
L2
L3
L4
D
H
m
R
A
E
B
b
c
e
L
n
o
p
θ
2 x e
1
6° ± 1
2
PAK (SMD-220)
2 x
B
(4)
E
4
2
14.61
17.78
11.43
3
MILLIMETERS
MIN.
4.06
0.00
0.51
0.51
1.14
0.38
0.38
1.14
8.51
6.86
9.65
6.22
1.78
1.27
4.78
8.89
2.08
3.81
0.51
90°
-
+
2.54 BSC
0.25 BSC
2 x b
3 x b2
0.010
A
H
(4)
R
MAX.
0.254
10.67
15.88
4.83
0.99
0.89
1.78
0.74
0.58
1.65
9.65
2.79
1.65
1.78
5.28
0.71
93°
M
C
-
-
-
-
-
-
-
A
Lead Assignments
HEXFET
1. - Gate
2., 4. - Drain
3. - Source
IGBTs, CoPACK
1. - Gate
2., 4. - Collector
3. - Emitter
M
B
Detail A
0.160
0.000
0.020
0.020
0.045
0.015
0.015
0.045
0.335
0.270
0.380
0.245
0.575
0.070
0.050
0.188
0.700
0.350
0.450
0.082
0.150
0.020
MIN.
90°
-
0.100 BSC
0.010 BSC
INCHES
For technical questions, contact: [e-mail]
± 0.004
c
MAX.
0.190
0.010
0.039
0.035
0.070
0.029
0.023
0.065
0.380
0.420
0.625
0.110
0.065
0.070
0.208
0.028
Diodes
1. - Anode *
2., 4. - Cathode
3. - Anode
* Part dependent
A
93°
c2
-
-
-
-
-
-
-
M
B
B
A
A
NOTES
Hyperfast Rectifier
4
4
2
2
(3)
(Datum A)
D
L2
L1
Modified JEDEC
outline TO-262
Notes
(1)
(2)
(3)
(4)
(5)
(6)
SYMBOL
Dimensioning and tolerancing as per ASME Y14.5M-1994
Dimension D and E do not include mold flash. Mold flash shall not
exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
Thermal pad contour optional within dimension E, L1, D1 and E1
Dimension b1 and c1 apply to base metal only
Controlling dimension: inches
Outline conform to JEDEC TO-262 except A1 (maximum), b
(minimum) and D1 (minimum) where dimensions derived the
actual package outline
B
2 x e
D1
A1
b1
b2
b3
E1
L1
L2
c1
c2
A
D
E
b
e
L
c
1
(2) (3)
B
E
2
C
3
C
13.46
MILLIMETERS
MIN.
4.06
2.03
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.38
6.86
9.65
6.22
3.56
3 x b
3 x b2
0.010
Lead Assignments
HEXFET
1. - Gate
2. - Drain
3. - Source
4. - Drain
Lead tip
-
2.54 BSC
A
L
(2)
M
A
MAX.
10.67
14.10
c
M
4.83
3.02
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
1.65
3.71
IGBTs, CoPACK
1. - Gate
2. - Collector
3. - Emitter
4. - Collector
-
-
B
A
A1
c2
Seating
plane
0.160
0.080
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.330
0.270
0.380
0.245
0.530
0.140
A
A
MIN.
B
-
0.100 BSC
INCHES
Document Number: 94003
Plating
c
Section B-B & C-C
Revision: 17-Apr-07
MAX.
0.190
0.119
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
0.420
0.555
0.065
0.146
Section A-A
Scale: None
-
b1, b3
(b, b2)
E1
(4)
E
NOTES
2, 3
4
4
4
2
3
3
3
c1
D1
Base
metal
(3)
(4)
(3)