SQR40N10-25-GE3 Vishay, SQR40N10-25-GE3 Datasheet - Page 4
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SQR40N10-25-GE3
Manufacturer Part Number
SQR40N10-25-GE3
Description
MOSFET,N CH,W DIODE,100V,40A,DPAK
Manufacturer
Vishay
Datasheet
1.SQR40N10-25-GE3.pdf
(7 pages)
Specifications of SQR40N10-25-GE3
Transistor Polarity
N Channel
Continuous Drain Current Id
40A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.019ohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Power Dissipation
RoHS Compliant
Power Dissipation Pd
136W
Rohs Compliant
Yes
SQR40N10-25
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
www.vishay.com
4
0.001
- 0.3
- 0.7
- 1.1
- 1.5
0.01
100
0.5
0.1
10
0.1
10
8
6
4
2
0
- 50
1
0
0
I
- 25
D
Source Drain Diode Forward Voltage
= 40 A
0.2
10
T
V
0
J
SD
Q
= 150 °C
g
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
25
- Total Gate Charge (nC)
T
J
Gate Charge
- Temperature (°C)
20
50
V
0.6
DS
75
= 50 V
30
I
T
D
J
100
0.8
= 250 μA
= 25 °C
A
= 25 °C, unless otherwise noted)
I
125
D
40
= 5 mA
1.0
150
175
50
1.2
0.20
0.16
0.12
0.08
0.04
130
124
118
112
106
100
2.5
2.1
1.7
1.3
0.9
0.5
0
Drain Source Breakdown vs. Junction Temperature
- 50
- 50
0
On-Resistance vs. Gate-to-Source Voltage
I
On-Resistance vs. Junction Temperature
- 25
I
D
- 25
D
= 10 mA
= 40 A
2
V
0
0
GS
T
T
J
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
25
25
4
50
50
S10-2455-Rev. C, 08-Nov-10
75
75
Document Number: 69060
V
GS
6
= 10 V
100
100
T
T
J
J
125
125
= 150 °C
= 25 °C
8
150
150
175
175
10