SQR40N10-25-GE3 Vishay, SQR40N10-25-GE3 Datasheet - Page 4

• Manufacturer Part Number: SQR40N10-25-GE3
• Description: MOSFET,N CH,W DIODE,100V,40A,DPAK
• Manufacturer: Vishay

Specifications of SQR40N10-25-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 0.019ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Power Dissipation: RoHS Compliant
• Power Dissipation Pd: 136W
• Rohs Compliant: Yes

SQR40N10-25
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
www.vishay.com
4
0.001
- 0.3
- 0.7
- 1.1
- 1.5
0.01
100
0.5
0.1
10
0.1
10
8
6
4
2
0
- 50
1
0
0
I
- 25
D
Source Drain Diode Forward Voltage
= 40 A
0.2
10
T
V
0
J
SD
Q
= 150 °C
g
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
25
- Total Gate Charge (nC)
T
J
Gate Charge
- Temperature (°C)
20
50
V
0.6
DS
75
= 50 V
30
I
T
D
J
100
0.8
= 250 μA
= 25 °C
A
= 25 °C, unless otherwise noted)
I
125
D
40
= 5 mA
1.0
150
175
50
1.2
0.20
0.16
0.12
0.08
0.04
130
124
118
112
106
100
2.5
2.1
1.7
1.3
0.9
0.5
0
Drain Source Breakdown vs. Junction Temperature
- 50
- 50
0
On-Resistance vs. Gate-to-Source Voltage
I
On-Resistance vs. Junction Temperature
- 25
I
D
- 25
D
= 10 mA
= 40 A
2
V
0
0
GS
T
T
J
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
25
25
4
50
50
S10-2455-Rev. C, 08-Nov-10
75
75
Document Number: 69060
V
GS
6
= 10 V
100
100
T
T
J
J
125
125
= 150 °C
= 25 °C
8
150
150
175
175
10