SQD50P04-09L-GE3 Vishay, SQD50P04-09L-GE3 Datasheet - Page 4

• Manufacturer Part Number: SQD50P04-09L-GE3
• Description: MOSFET,N CH,W DIODE,40V,50A,TO-252
• Manufacturer: Vishay

Specifications of SQD50P04-09L-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -50A
• Drain Source Voltage Vds: -40V
• On Resistance Rds(on): 0.0076ohm
• Rds(on) Test Voltage Vgs: -10V
• Voltage Vgs Max: -20V
• Power: RoHS Compliant
• Power Dissipation Pd: 136W
• Rohs Compliant: Yes

SQD50P04-09L
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
www.vishay.com
4
0.10
0.08
0.06
0.04
0.02
2.3
2.0
1.7
1.4
1.1
0.8
0.5
0
- 50
0
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
I
- 25
D
= 24 A
2
V
0
GS
T
J
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
25
4
50
75
6
V
T
J
GS
100
- 45
- 47
- 49
- 51
- 53
- 55
= 25 °C
A
= 10 V
T
- 50
= 25 °C, unless otherwise noted)
J
= 150 °C
125
8
- 25
On-Resistance vs. Junction Temperature
150
I
D
0
175
= 10 mA
10
T
J
- Junction Temperature (°C)
25
50
75
100
0.001
- 0.1
- 0.4
0.01
100
1.1
0.8
0.5
0.2
0.1
10
1
- 50
125
0
- 25
150
Source Drain Diode Forward Voltage
0.2
T
175
V
0
J
SD
= 150 °C
- Source-to-Drain Voltage (V)
0.4
Threshold Voltage
25
T
J
- Temperature (°C)
50
0.6
75
S10-1996-Rev. B, 20-Sep-10
T
Document Number: 65018
J
I
D
= 25 °C
100
0.8
= 250 μA
125
I
1.0
D
= 5 mA
150
175
1.2