SQD50N03-09-GE3 Vishay, SQD50N03-09-GE3 Datasheet - Page 4

• Manufacturer Part Number: SQD50N03-09-GE3
• Description: MOSFET,N CH,W DIODE,30V,50A,TO-252
• Manufacturer: Vishay

Specifications of SQD50N03-09-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 50A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.006ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Power Dissipation: RoHS Compliant
• Power Dissipation Pd: 71W
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.01 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 62 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

SQD50N03-09
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
www.vishay.com
4
0.05
0.04
0.03
0.02
0.01
2.1
1.8
1.5
1.2
0.9
0.6
0
- 50
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
I
- 25
D
= 30 A
2
0
V
T
GS
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
4
50
T
J
75
= 25 °C
6
100
V
40
38
36
34
32
30
A
GS
Drain Source Breakdown vs. Junction Temperature
- 50
= 25 °C, unless otherwise noted)
= 10 V
T
125
J
= 150 °C
8
- 25
150
0
T
175
10
J
- Junction Temperature (°C)
25
50
75
100
0.001
- 0.3
- 0.7
- 1.1
- 1.5
0.01
100
0.5
0.1
0.1
10
1
- 50
I
125
D
0
= 10 mA
- 25
150
Source Drain Diode Forward Voltage
0.2
175
V
0
SD
T
- Source-to-Drain Voltage (V)
J
0.4
Threshold Voltage
25
T
= 150 °C
J
- Temperature (°C)
50
0.6
75
S10-2148-Rev. A, 27-Sep-10
T
Document Number: 68867
J
100
0.8
I
= 25 °C
D
= 250 μA
125
I
1.0
D
= 5 mA
150
175
1.2