SQD50N03-06P-GE3 Vishay, SQD50N03-06P-GE3 Datasheet - Page 3

• Manufacturer Part Number: SQD50N03-06P-GE3
• Description: MOSFET,N CH,W DIODE,30V,50A,TO-252
• Manufacturer: Vishay

Specifications of SQD50N03-06P-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 50A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.0047ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Power Dissipation: RoHS Compliant
• Power Dissipation Pd: 83W
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0065 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 120 V
• Continuous Drain Current: 84 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

TYPICAL CHARACTERISTICS (T
Document Number: 68634
S10-2210-Rev. C, 27-Sep-10
0.025
0.020
0.015
0.010
0.005
0.000
160
120
1.5
1.2
0.9
0.6
0.3
0.0
80
40
0
0
0
0
On-Resistance vs. Drain Current
V
GS
T
20
3
1
V
C
V
DS
T
= 10 V thru 5 V
GS
= 125 °C
Transfer Characteristics
Output Characteristics
C
- Drain-to-Source Voltage (V)
= 25 °C
- Gate-to-Source Voltage (V)
I
D
- Drain Current (A)
40
6
2
T
60
9
3
C
= - 55 °C
V
A
V
V
GS
GS
GS
= 25 °C, unless otherwise noted)
V
= 4.5 V
12
GS
= 10 V
80
= 4 V
4
= 3 V
100
15
5
5000
4000
3000
2000
1000
120
100
140
120
100
80
60
40
20
80
60
40
20
0
0
0
0
0
0
T
T
C
C
= 125 °C
C
= 25 °C
rss
C
C
5
iss
10
oss
2
V
V
GS
DS
Transfer Characteristics
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
Transconductance
I
10
D
T
- Drain Current (A)
C
Capacitance
20
SQD50N03-06P
= - 55 °C
4
15
Vishay Siliconix
30
6
20
T
C
T
= - 55 °C
www.vishay.com
C
T
C
= 25 °C
40
= 125 °C
8
25
10
50
30
3