SQD25N06-22L-GE3 Vishay, SQD25N06-22L-GE3 Datasheet - Page 3
SQD25N06-22L-GE3
Manufacturer Part Number
SQD25N06-22L-GE3
Description
MOSFET,N CH,W DIODE,60V,25A,TO-252
Manufacturer
Vishay
Datasheet
1.SQD25N06-22L-GE3.pdf
(7 pages)
Specifications of SQD25N06-22L-GE3
Transistor Polarity
N Channel
Continuous Drain Current Id
25A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.018ohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Power Dissipation
RoHS Compliant
Power Dissipation Pd
62W
Rohs Compliant
Yes
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SQD25N06-22L-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS (T
Document Number: 65360
S10-1850-Rev. B, 06-Sep-10
2.5
2.1
1.7
1.3
0.9
0.5
50
40
30
20
10
30
24
18
12
0
6
0
- 50 - 25
0
0
On-Resistance vs. Junction Temperature
I
D
V
GS
= 12 A
= 10 V thru 5 V
T
6
2
C
V
0
T
DS
= - 55 °C
J
Output Characteristics
V
- Junction Temperature (°C)
GS
Transconductance
- Drain-to Source Voltage (V)
25
I
D
= 4 V
- Drain Current (A)
12
4
50
25 °C
V
GS
V
75
GS
= 3 V
18
125 °C
6
= 10 V
100
A
= 25 °C, unless otherwise noted)
V
125
GS
24
8
= 4.5 V
150
175
30
10
80
76
72
68
64
60
0.10
0.08
0.06
0.04
0.02
Drain Source Breakdown vs. Junction Temperature
- 50 - 25
30
24
18
12
6
0
0
0
0
I
D
= 10 mA
T
C
25 °C
0
= 125 °C
2
On-Resistance vs. Drain Current
T
6
V
J
GS
- Junction Temperature (°C)
Transfer Characteristics
25
- Gate-to-Source Voltage (V)
I
D
50
SQD25N06-22L
12
4
- Drain Current (A)
- 55 °C
V
Vishay Siliconix
75
GS
V
= 4.5 V
GS
18
6
100
= 10 V
125
www.vishay.com
24
8
150
175
10
30
3