SQD19P06-60L-GE3 Vishay, SQD19P06-60L-GE3 Datasheet

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SQD19P06-60L-GE3

Manufacturer Part Number
SQD19P06-60L-GE3
Description
MOSFET,N CH,W DIODE,60V,20A,TO-252
Manufacturer
Vishay
Datasheet

Specifications of SQD19P06-60L-GE3

Transistor Polarity
P Channel
Continuous Drain Current Id
-20A
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
0.046ohm
Rds(on) Test Voltage Vgs
-10V
Voltage Vgs Max
-20V
Power
RoHS Compliant
Power Dissipation Pd
46W
Rohs Compliant
Yes

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SQD19P06-60L-GE3
Quantity:
133 500
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
Document Number: 65158
S10-1919-Rev. B, 06-Sep-10
PRODUCT SUMMARY
V
R
R
I
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
D
DS
G
DS(on)
DS(on)
(A)
Top View
TO-252
(V)
D
(Ω) at V
(Ω) at V
S
GS
GS
Drain Connected to Tab
= - 10 V
= - 4.5 V
b
b
P-Channel 60 V (D-S) 175 °C MOSFET
G
P-Channel MOSFET
a
Single
0.055
0.100
C
- 60
- 20
D
S
= 25 °C, unless otherwise noted)
PCB Mount
T
T
L = 0.1 mH
T
T
Automotive
C
C
C
C
= 125 °C
= 125 °C
= 25 °C
= 25 °C
c
TO-252
SQD19P06-60L-GE3
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Package with Low Thermal Resistance
• Compliant to RoHS Directive 2002/95/EC
• AEC-Q101 Qualified
• Find out more about Vishay’s Automotive Grade Product
Definition
Requirements at:
SYMBOL
SYMBOL
T
R
R
J
V
V
E
I
I
P
, T
thJC
DM
thJA
I
I
AS
DS
GS
D
S
AS
D
stg
®
Power MOSFET
www.vishay.com/applications
d
- 55 to + 175
LIMIT
LIMIT
± 20
- 60
- 20
- 11
- 25
- 80
- 24
3.2
28
46
15
50
SQD19P06-60L
Vishay Siliconix
www.vishay.com
UNIT
UNIT
°C/W
mJ
°C
W
A
V
1

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SQD19P06-60L-GE3 Summary of contents

Page 1

... TrenchFET 0.100 • Package with Low Thermal Resistance - 20 • Compliant to RoHS Directive 2002/95/EC Single • AEC-Q101 Qualified • Find out more about Vishay’s Automotive Grade Product S Requirements at: D P-Channel MOSFET TO-252 SQD19P06-60L-GE3 = 25 °C, unless otherwise noted) C SYMBOL ° 125 ° ...

Page 2

... SQD19P06-60L Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... V - Gate-to-Source Voltage (V) GS Transconductance 2000 1500 C iss 1000 500 C oss C rss Drain-to-Source Voltage (V) DS Capacitance Document Number: 65158 S10-1919-Rev. B, 06-Sep- °C, unless otherwise noted SQD19P06-60L Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 0.25 0. Drain Current (A) D On-Resistance vs ...

Page 4

... SQD19P06-60L Vishay Siliconix TYPICAL CHARACTERISTICS (T 2 2.0 1.7 1.4 1.1 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 0.5 0.4 0.3 0.2 0.1 0 Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage www.vishay.com °C, unless otherwise noted) A 100 0.1 0.01 0.001 100 125 150 175 1 ...

Page 5

... S10-1919-Rev. B, 06-Sep-10 I Limited DM 100 Limited DS(on 0 °C C Single Pulse BVDSS Limited 0.01 0.01 0 Drain-to-Source Voltage ( minimum V at which DS(on) Safe Operating Area - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient SQD19P06-60L Vishay Siliconix 100 µ 100 ms 100 is specified 10 100 www.vishay.com 1000 5 ...

Page 6

... SQD19P06-60L Vishay Siliconix THERMAL RATINGS ( °C, unless otherwise noted Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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