SQD15N06-42L-GE3 Vishay, SQD15N06-42L-GE3 Datasheet - Page 4

• Manufacturer Part Number: SQD15N06-42L-GE3
• Description: MOSFET,N CH,W DIODE,60V,15A,TO-252
• Manufacturer: Vishay

Specifications of SQD15N06-42L-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 15A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 0.037ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Power Dissipation: RoHS Compliant
• Power Dissipation Pd: 33W
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.042 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 15 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

SQD15N06-42L
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
www.vishay.com
4
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
2.5
2.1
1.7
1.3
0.9
0.5
0.5
0.4
0.3
0.2
0.1
- 50 - 25
0
0
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
I
D
= 10 A
T
2
J
0
V
= 25 °C
T
GS
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
4
V
50
GS
= 10 V
75
6
100
T
J
A
= 150 °C
V
75
72
69
66
63
60
= 25 °C, unless otherwise noted)
GS
- 50
This datasheet is subject to change without notice.
125
= 4.5 V
8
I
D
On-Resistance vs. Junction Temperature
- 25
= 10 mA
150 175
0
10
T
J
- Junction Temperature (°C)
25
50
75
0.001
- 0.1
- 0.4
- 0.7
- 1.0
0.01
100
100
0.1
0.5
0.2
10
1
- 50
0
125
- 25
Source Drain Diode Forward Voltage
150
0.2
T
V
0
J
SD
175
= 150 °C
- Source-to-Drain Voltage (V)
0.4
25
Threshold Voltage
T
J
- Temperature (°C)
50
0.6
I
75
D
S11-0253-Rev. C, 21-Mar-11
www.vishay.com/doc?91000
= 250 µA
Document Number: 68880
T
100
0.8
J
= 25 °C
I
D
125
= 5 mA
1.0
150 175
1.2