SKM300GB12E4 SEMIKRON, SKM300GB12E4 Datasheet - Page 4

• Manufacturer Part Number: SKM300GB12E4
• Description: IGBT HALFBRIDGE MODULE 300A 1200V
• Manufacturer: SEMIKRON

Specifications of SKM300GB12E4

• Module Configuration: Dual
• Dc Collector Current: 300A
• Collector Emitter Voltage Vces: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor Case Style: SEMITRANS 3
• No. Of Pins: 7
• Svhc: No
• Family/system: SEMITRANS
• Voltage (v): 1200
• Current (a): 300
• Chip-type: IGBT 4 (Trench)
• Case: SEMITRANS 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SKM300GB12E4
4
Fig. 7: Typ. switching times vs. I
Fig. 9: Transient thermal impedance
Fig. 11: CAL diode peak reverse recovery current
C
Rev. 2 – 16.06.2009
Fig. 8: Typ. switching times vs. gate resistor R
Fig. 10: CAL diode forward characteristic
Fig. 12: Typ. CAL diode peak reverse recovery charge
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