6MBI15S-120-50 FUJI ELECTRIC, 6MBI15S-120-50 Datasheet - Page 11

• Manufacturer Part Number: 6MBI15S-120-50
• Description: 6-PACK IGBT MODULE 15A 1200V NPT
• Manufacturer: FUJI ELECTRIC

Specifications of 6MBI15S-120-50

• Module Configuration: Six
• Transistor Polarity: N Channel
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 2.6V
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: Module
• No. Of: RoHS Compliant
• Power Dissipation Pd: 110W
• Rohs Compliant: Yes

1000
5000
1000
500
100
500
100
50
50
12
10
8
6
4
2
0
30
30
0
tr
tf
Switching time vs. Collector current (typ.)
toff
ton
Switching time vs. Gate resistance (typ.)
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=15A, VGE=± 15V, Tj= 125℃
Vcc=600V, VGE=± 15V, Rg=82Ω , Tj= 25℃
ton
Vcc=600V, Ic=15A, VGE=± 15V, Tj= 25℃
toff
tf
tr
5
Collector current : Ic [ A ]
Gate resistance : Rg [ Ω
Gate resistance : Rg [ Ω
100
100
10
15
]
]
20
Eoff
Err
Eon
1000
1000
25
1000
500
100
50
40
30
20
10
5
4
3
2
1
0
0
0
0
0
Switching loss vs. Collector current (typ.)
Switching time vs. Collector current (typ.)
+VGE=15V, - VGE≦ 15V, Rg≧ 82Ω , Tj≦ 125℃
Vcc=600V, VGE=± 15V, Rg= 82Ω , Tj= 125℃
toff
ton
200
Collector - Emitter voltage : VCE [ V ]
tr
tf
MS5F 6170
Reverse bias safe operating area
5
5
Vcc=600V, VGE=± 15V, Rg=82Ω
Collector current : Ic [ A ]
Collector current : Ic [ A ]
400
10
10
600
15
800
15
20
1000
Eoff（ 125℃ ）
Eon（ 125℃ ）
Eoff（ 25℃ ）
Err（ 125℃ ）
Eon（ 25℃ ）
Err（ 25℃ ）
20
H04- 004- 03a
11
25
1200
14
1400
25
30