2MBI150U4B-120-50 FUJI ELECTRIC, 2MBI150U4B-120-50 Datasheet - Page 10
![no-image](/images/no-image-200.jpg)
2MBI150U4B-120-50
Manufacturer Part Number
2MBI150U4B-120-50
Description
DUAL IGBT MODULE 150A 1200V TRENCH
Manufacturer
FUJI ELECTRIC
Datasheet
1.2MBI150U4B-120-50.pdf
(14 pages)
Specifications of 2MBI150U4B-120-50
Module Configuration
Dual
Transistor Polarity
N Channel
Dc Collector Current
200A
Collector Emitter Voltage Vces
2.2V
Power Dissipation Max
780W
Collector Emitter Voltage V(br)ceo
1.2kV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2MBI150U4B-120-50
Manufacturer:
FUJI/富士电机
Quantity:
20 000
100.0
400
300
200
100
10.0
400
300
200
100
1.0
0.1
0
0
0
0
0
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Capacitance vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage : VCE [ V ]
VGE=0V, f=1MHz, Tj=25
1
1
VGE=20V
VGE=15V / chip
10
Tj=25
Tj=25
2
2
o
o
C / chip
C
15V
3
3
Tj=125
20
12V
o
C
o
C
4
4
Cies
Cres
Coes
10V
8V
30
5
5
10
400
300
200
100
8
6
4
2
0
0
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
0
0
5
0
Collector current vs. Collector-Emitter voltage (typ.)
MS5F6568
Collector-Emitter voltage : VCE [ V ]
200
1
10
Gate-Emitter voltage : VGE [ V ]
Vcc=600V, Ic=150A, Tj=25
Dynamic Gate charge (typ.)
Gate charge : Qg [ nC ]
Tj=125
Tj=25
2
VGE=20V
400
15
o
o
C / chip
C / chip
3
VGE
VCE
15V
600
20
o
C
10
H04-004-03a
Ic=300A
Ic=150A
Ic=75A
4
10V
14
12V
8V
800
25
a
5