SI9933BDY-T1-GE3 Vishay, SI9933BDY-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI9933BDY-T1-GE3
• Description: DUAL P CHANNEL MOSFET, -20V, 4.7A
• Manufacturer: Vishay

Specifications of SI9933BDY-T1-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: 4.7A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 60mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -600mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si9933BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
0.6
0.4
0.2
0.0
0.01
- 50
0.1
2
1
10
- 25
- 4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
T
Threshold Voltage
J
- Temperature (°C)
25
I
D
10
= 250 µA
- 3
Single Pulse
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
10
100
1
0.1
10
- 2
* V
Limited by R
125
Limited
GS
I
D(on)
Single Pulse
T
A
V
= 25 °C
minimum V
150
DS
Square Wave Pulse Duration (s)
- Drain-to-Source Voltage (V)
DS(on)
Safe Operating Area
1
10
- 1
BVDSS Limited
*
GS
at which R
DS(on)
10
I
50
40
30
20
10
DM
1
0
10
is specified
Limited
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
-
2
10
100
-
1
Single Pulse Power
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
1
-
T
t
Time (s)
A
1
S09-1925-Rev. C, 28-Sep-09
= P
t
2
Document Number: 72748
DM
Z
thJA
10
thJA
100
t
t
1
2
(t)
= 90 °C/W
100
600
600