IXA12IF1200TC IXYS SEMICONDUCTOR, IXA12IF1200TC Datasheet - Page 3

• Manufacturer Part Number: IXA12IF1200TC
• Description: IGBT,1200V,20A,TO-268AA
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXA12IF1200TC

• Transistor Type: IGBT
• Dc Collector Current: 20A
• Collector Emitter Voltage Vces: 2.1V
• Power Dissipation Max: 85W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TO-268AA
• Rohs Compliant: Yes
• Power Dissipation Pd: 85W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
T
T
R
Weight
F
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
C
Package TO-268AA (D3Pak)
VJ
stg
thCH
Assembly Code
Assembly Line
Logo
Part No.
Date Code
Definition
Virtual junction temperature
Storage temperature
Thermal resistance case to heatsink
Mounting force with clip
Product Marking
YYWW Z
abcd
IXYS
Standard
Ordering
IXA 12 IF 1200 TC
Part Name
IXA12IF1200HB
IXA12IF1200PB
IXA12IF1200PC
Similar Part
Conditions
Marking on Product
IXA12IF1200TC
TO-247AD (3)
TO-220AB (3)
TO-263AB (D2Pak)
Data according to IEC 60747and per diode unless otherwise specified
Package
Delivering Mode
Voltage class
1200
1200
1200
Part number
1200
Base Qty Code Key
TC
12
IF
X
A
I
=
=
=
=
=
=
=
IGBT
XPT IGBT
Gen 1 / std
Current Rating [A]
Copack
Reverse Voltage [V]
TO-268AA (D3Pak) (2)
IXA12IF1200TC
min.
-55
-55
20
Ratings
typ.
0.15
5
max.
preliminary
150
150
120
20110330a
Unit
K/W
°C
°C
N
g