CTB41-800B C3 SEMI, CTB41-800B Datasheet - Page 2
![TRIAC, 800V, 40A, TO-118](/photos/22/26/222605/4652108_sml.jpg)
CTB41-800B
Manufacturer Part Number
CTB41-800B
Description
TRIAC, 800V, 40A, TO-118
Manufacturer
C3 SEMI
Datasheet
1.CTB40-400B.pdf
(2 pages)
Specifications of CTB41-800B
Peak Repetitive Off-state Voltage, Vdrm
800V
Gate Trigger Current Max (qi), Igt
50mA
On State Rms Current It(rms)
40A
Holding Current Max Ih
75mA
Gate Trigger Voltage Max Vgt
1.3V
M
Static Characteristics
V
V to MAX @ Threshold Voltage
R d MAX @ Dynamic Resistance
I
I
Thermal Resistances
Junction to Case (AC)
Junction to Case (AC)
Junction to Ambient
Junction to Ambient
DRM
RRM
T
Approvals
UL - Pending
REF. Min.
MAX @ I
M
B
C
D
G
H
K
N
O
P
A
E
F
J
L
Q
MAX @ V
MAX @ V
E
Millimeters
14.35
20.4
15.8
5.4
15.1
1.20
1.45
4.4
0.5
8.0
4.08
4.6
1.20
1.20
2.7
TM
J
DRM
= 35 A, tp = 380µs
DRM
Weight: 6.0g (0.21 oz)
Typ.
3.23
D
Dimensions
= V
= V
P
ØL
RRM
RRM
21.1
15.60
4.17
16.5
Max.
15.5
4.8
1.40
2.9
8.25
1.40
5.65
1.40
4.6
0.7
1.55
C3 Semiconductor, LLC
O
B
N
NOTE 2
C
A
Inches
Min.
0.181
0.106
0.047
0.173
0.020
0.315
0.047
0.047
NOTE 2
0.057
0.213
0.161
0.622
NOTE 2
0.594
0.8
TO-218 Isolated
TO-218 Isolated
Typ.
0.127
TO-218
TO-218
0.565
0.610
0.181
0.028
0.325
0.189
0.055
0.055
0.055
0.061
0.222
0.164
0.650
Max.
0.114
0.831
G
Tj = 25˚C
Tj = 125˚C
Tj = 125˚C
Tj = 25˚C
Tj = 125˚C
H
Q
F
For recommended applications and more information contact:
For recommended applications and more information contact:
USA : Sales Support
USA : Sales Support
C3 Semiconductors, LLC. 2320 Paseo de las Americas, Ste. 104, San Diego, CA 92154
Email : sales@c3semi.com
K
SYMBOL
0.614
Rth(j-c)
Rth(j-c)
Rth(j-a)
Rth(j-a)
1000.0
100.0
10.0
1.0
50
40
30
20
10
0
0.5
Fig. 1: Power dissipation versus RMS on-state current (full cycle).
0
RATING
0.8 ˚ C/W
1.1 ˚ C/W
50 ˚ C/W
50 ˚ C/W
(888) 882-8689
16m Ω
1.55V
0.85V
3mA
5µA
1
5
on-state voltage (instantaneous values)
WEB SITE: http://www.C3semi.com
1.5
10
Fig. 3: On-state current versus
15
2
SERIES
Part Number Selection
Part Number
CTA/CTB41-xxxB
CTA/CTB41-xxxBW
Part Number Designation
CT
© 2007 C3 Semiconductors, Speci cations subject to change without notice.
I
2.5
T(RMS)
V
20
TM
[V]
[A]
25
3
Isolation Type
A: Isolated
B: Non-Isolated
3.5
30
41
35
4
400, 600, 800
400, 600, 800
Rated Current
41:40 Amp
Voltage [Vpk]
4.5
40
5
45
Maximum
Blocking Voltage
400:400Vpk
600:600Vpk
800:800Vpk
1200: 1200Vpk
40Amp - 400/600/800/1000V - TRIAC
400
300
200
100
80
60
50
40
30
20
10
1
48
40
32
24
16
BW
50mA
50mA
8
0
G T
I
70
[mA]
Fig. 4: Non-repetitive surge peak on-state
CTA/CTB41
CTB41
Type
B: Standard (I
BW: Alternistor/No Snubber (I
80
current versus number of cycles.
Fig. 2: RMS on-state current versus
Alternistor/No Snubber TO-218
case temperature (full cycle)
90
Number of Cycles
10
Non-Repetitive
Tj initial = 25˚C
CTA41
100
Standard
Packaging
Blank: Bulk
PT: Plastic Tube
Type
T
GT
C
=50mA)
110
[˚C]
120
100
130
TO-218
Package
GT
140
=50mA)
150
1000
160