CTB08-1000C C3 SEMI, CTB08-1000C Datasheet - Page 2

• Manufacturer Part Number: CTB08-1000C
• Description: TRIAC, 1KV, 8A, TO-220AB
• Manufacturer: C3 SEMI

Specifications of CTB08-1000C

• Peak Repetitive Off-state Voltage, Vdrm: 1kV
• Gate Trigger Current Max (qi), Igt: 25mA
• On State Rms Current It(rms): 8A
• Peak Non Rep Surge Current Itsm 50hz: 80A
• Holding Current Max Ih: 25mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

(For CTA series)
Static Characteristics
V
V to MAX @ Threshold Voltage
R d MAX @ Dynamic Resistance
I
I
Thermal Resistances
Junction to Case (AC)
Junction to Case (AC)
Junction to Ambient
Junction to Ambient
ISO9001 Certified
Approvals
UL Recognized Component - E72445
© 2007 C3 Semiconductor, All Rights Reserved. Specifications are subject to change without prior notice. C3 Semiconductor and the C3 Semiconductor l ogo are trademarks of C3 Semiconductor, LLC.
DRM
RRM
T
REF. Min.
M
MAX @ I
M
N
A
B
C
D
E
G
H
J
K
O
P
Q
F
I
L
MAX @ V
MAX @ V
Millimeters
15.24
12.78
15.49 16
9.96
0.69
1.22
4.62
0.46
2.49
2.39
6.48
3.78
2.59
0.99
0.99
E
TM
DRM
=11 A, tp = 380µs
DRM
Weight: 2.3g (0.08 oz)
J
Typ.
3.23
2.67
D
Dimensions
= V
= V
P
RRM
RRM
15.75
13.79
10.36
16.51
L
Max.
C3 Semiconductor, LLC
0.94
1.32
4.83
0.61
2.84
2.69
6.88
3.89
2.9
1.55
1.55
O
N
B
NOTE 2
A
C
NOTE 2
Inches
Min.
NOTE 2
0.6
0.503
0.392
0.027
0.048
0.182
0.018
0.098
0.094
0.255
0.149
0.61
0.102
0.039
0.039
F
TO-220AB Isolated
TO-220AB Isolated
Typ.
0.127
0.63
0.105
Q
I
G
TO-220AB
TO-220AB
H
Max.
0.62
0.543
0.408
0.037
0.052
0.19
0.024
0.112
0.106
0.271
0.153
0.65
0.114
0.061
0.061
Tj = 25˚C
Tj = 125˚C
Tj = 125˚C
Tj = 25˚C
Tj = 125˚C
K
SYMBOL
R th(j-c)
R th(j-c)
R th(j-a)
R th(j-a)
For recommended applications and more information contact:
For recommended applications and more information contact:
USA : Sales Support
USA : Sales Support
C3 Semiconductors, LLC. 2320 Paseo de las Americas, Ste. 104, San Diego, CA 92154
Email : [e-mail]
10
8
6
4
2
0
Fig. 1: Power dissipation versus RMS on-state current (full cycle).
0
100.0
10.0
1.0
1
0.5
RATING
1.6 ˚ C/W
2.5 ˚ C/W
on-state voltage (instantaneous values)
60 ˚ C/W
60 ˚ C/W
1
50mΩ
2
1.55V
0.85V
1mA
5µA
Fig. 3: On-state current versus
1.5
[phone]
3
2
I
T(RMS)
V
4
WEB SITE: http://www.C3semi.com
2.5
TM
SERIES
Part Number Selection
Part Number
CTA/CTB08-xxxB
CTA/CTB08-xxxBW
CTA/CTB08-xxxC
CTA/CTB08-xxxCW
CTA/CTB08-xxxSW
CTA/CTB08-xxxTW
Part Number Designation
CT
[V]
[A]
5
3
© 2007 C3 Semiconductors, Speci cations subject to change without notice.
3.5
6
4
Isolation Type
A: Isolated
B: Non-Isolated
7
4.5
08
8
400, 600, 800, 1000
400, 600, 800, 1000
400, 600, 800, 1000
400, 600, 800, 1000
400, 600, 800, 1000
400, 600, 800
Rated Current
08: 8 Amp
5
Voltage [Vpk]
9
250
160
120
100
80
60
50
40
30
20
10
Maximum
Blocking Voltage
400: 400Vpk
600: 600Vpk
800: 800Vpk
1000: 1000Vpk
1
8Amp - 400/600/800/1000V - TRIAC
12
10
8
6
4
2
0
80
I
CW
GT
Fig. 4: Non-repetitive surge peak on-state
50mA
25mA
50mA
35mA
10mA
5mA
[mA]
Fig. 2: RMS on-state current versus
current versus number of cycles.
CTA/CTB08
Type
B: Standard (I
BW: Alternistor/No Snubber (I
C: Standard (I
CW: Alternistor/No Snubber (I
SW: Logic Level (I
TW: Logic Level (I
90
case temperature (full cycle)
Alternistor/No Snubber TO-220AB
Alternistor/No Snubber TO-220AB
Number of Cycles
10
Logic Level
Logic Level
Standard
Standard
100
T
Packaging
Blank: Bulk
PT: Plastic Tube
C
Type
GT
GT
[˚C]
=50mA)
=25mA)
Isolated
GT
GT
110
=5mA)
=10mA)
100
Non-Repetitive
Tj initial = 25˚C
TO-220AB
TO-220AB
TO-220AB
TO-220AB
Package
Non-Isolated
120
GT
GT
=35mA)
=50mA)
1000
130