NTE101 NTE ELECTRONICS, NTE101 Datasheet - Page 2
![RF TRANSISTOR, NPN, 25V](/photos/22/17/221704/4550372_sml.jpg)
NTE101
Manufacturer Part Number
NTE101
Description
RF TRANSISTOR, NPN, 25V
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE100.pdf
(3 pages)
Specifications of NTE101
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
25V
Power Dissipation Pd
150mW
Dc Collector Current
300mA
Dc Current Gain Hfe
100
No. Of Pins
3
Current Rating
300mA
Voltage Rating
25V
Electrical Characteristics (Cont’d): (T
Emitter Cutoff Current
Static Forward Current Transfer Ratio
Base–Emitter Voltage
Collector–Emitter Saturation Voltage
Small–Signal Forward Current Transfer Ratio
Output Capacitance
Switching Characteristics
Delay Time
Rise Time
Storage Time
Fall Time
Stored Base Charge
NTE101
NTE101
NTE101
NTE101
NTE101
NTE101
NTE101
NTE101
NTE101
NTE100
NTE100
NTE100
NTE100
NTE100
NTE100
NTE100
NTE100
NTE100
Parameter
Symbol
V
I
CE(sat)
V
C
Q
h
EBO
h
A
t
t
t
FE
BE
t
ob
d
s
fe
sb
r
f
= +25 C unless otherwise specified)
I
V
V
V
V
I
I
I
I
I
I
V
V
V
V
I
I
R
R
I
C
B
B
B
B
B
B
C
B(2)
B(1)
CE
CE
CE
CE
CE
CE
CB
CB
L
L
= 0.4mA, I
= 1mA, I
= 0.5mA, I
= 0.4mA, I
= 1mA, I
= 0.5mA, I
= 0
= 10mA, I
= 1k
= 1k
= 0.15V, I
= 0.20V, I
= 1V, I
= 0.35V, I
= 6V I
= 5V
= 6V
= 5V
= 0.7mA, V
= 1mA, I
Test Conditions
C
C
C
V
V
C
I
B(1)
E
C
C
C
C
EB
EB
= 10mA
= 24mA
= 24mA
C
= 1mA, f = 1kHz
C
C
C
= 0, f = 1MHz
= 12mA
= 10mA
= 12mA
= 10mA
= 10mA
= 2.5V
= 25V
BE(off)
= 12mA
= 24mA
= 200mA
= 1.3mA,
= 0.8V,
0.15
Min
30
24
20
10
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.26
0.30
0.22
0.08
0.08
0.07
0.14
0.07
0.20
0.38
0.70
0.19
0.40
Typ
100
100
100
135
105
800
110
14
1
2
9
1400
Max
0.35
0.40
0.40
0.15
0.20
0.20
2.5
20
20
6
–
–
–
–
–
–
–
–
–
–
–
–
–
Unit
pcb
pF
pF
V
V
V
V
V
V
A
A
s
s
s
s
s
s
s