BC856BM3T5G ON Semiconductor, BC856BM3T5G Datasheet

BIPOLAR TRANSISTOR, PNP, -65V

BC856BM3T5G

Manufacturer Part Number
BC856BM3T5G
Description
BIPOLAR TRANSISTOR, PNP, -65V
Manufacturer
ON Semiconductor
Datasheet

Specifications of BC856BM3T5G

Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
65V
Transition Frequency Typ Ft
100MHz
Power Dissipation Pd
265mW
No. Of Pins
3
Continuous Collector Current Ic
100mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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BC856BM3T5G
General Purpose Transistor
PNP Silicon
applications. It is housed in the SOT−723 which is designed for low
power surface mount applications.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 1
THERMAL CHARACTERISTICS
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Total Device Dissipation FR− 5 Board
Thermal Resistance,
Total Device Dissipation
Thermal Resistance,
Junction and Storage
This transistor is designed for general purpose amplifier
This is a Pb−Free Device
(Note 1)
T
Derate above 25°C
Junction to Ambient (Note 1)
Alumina Substrate (Note 2)
T
Derate above 25°C
Junction to Ambient (Note 2)
Temperature Range
A
A
= 25°C
= 25°C
Characteristic
Rating
Preferred Devices
Symbol
Symbol
T
V
V
V
R
R
J
P
P
CEO
CBO
, T
EBO
I
qJA
qJA
C
D
D
stg
−55 to
Value
−100
+150
−5.0
Max
−65
−80
265
470
640
195
2.1
5.1
mW/°C
mW/°C
1
°C/W
°C/W
Unit
Unit
mW
mW
mA
°C
V
V
V
†For information on tape and reel specifications,
Preferred devices are recommended choices for future use
and best overall value.
BC856BM3T5G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
3
Device
1
ORDERING INFORMATION
BASE
2
3B = Specific Device Code
M
http://onsemi.com
1
= Date Code
CASE 631AA
(Pb−Free)
SOT−723
Package
SOT−723
STYLE 1
COLLECTOR
Publication Order Number:
EMITTER
3
2
8000/Tape & Reel
Shipping
MARKING
DIAGRAM
BC856BM3/D
3B M

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BC856BM3T5G Summary of contents

Page 1

... Specific Device Code M = Date Code ORDERING INFORMATION Device Package Shipping BC856BM3T5G SOT−723 8000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value ...

Page 2

... Current −Gain − Bandwidth Product (I = −10 mA −5.0 Vdc 100 MHz Output Capacitance (V = − 1.0 MHz) CB Noise Figure (I = −0.2 mA −5.0 Vdc 2.0 kW 1.0 kHz 200 Hz BC856BM3T5G (T = 25°C unless otherwise noted 150° −10 mA −0.5 mA −100 mA −5.0 mA −0.5 mA −5.0 mA −5 −5.0 V) http://onsemi.com ...

Page 3

... I , BASE CURRENT (mA) B Figure 3. Collector Saturation Region 8.0 6 4.0 2.0 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 − REVERSE VOLTAGE (VOLTS) R Figure 5. Capacitance BC856BM3T5G TYPICAL CHARACTERISTICS −1 25°C J −0.8 V BE(sat) −0 −0.4 −0.2 V CE(sat) 0 −200 −0.2 −0.5 −1.0 −1.0 −1.4 −100 mA −200 mA − ...

Page 4

... Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com BC856BM3T5G PACKAGE DIMENSIONS SOT−723 CASE 631AA−01 ISSUE B NOTES: 1 ...

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