ZXT13N50DE6 Diodes Inc, ZXT13N50DE6 Datasheet - Page 2

• Manufacturer Part Number: ZXT13N50DE6
• Description: TRANSISTOR, NPN, SOT23-6
• Manufacturer: Diodes Inc

Specifications of ZXT13N50DE6

• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 50V
• Power Dissipation Pd: 1.1W
• Dc Collector Current: 4A
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-23
• No. Of Pins: 3
• Dc Current Gain Hfe: 450
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
ISSUE 1 - NOVEMBER 1999
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at TA=25°C (a)
Linear Derating Factor
Power Dissipation at TA=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
V
V
V
I
I
I
P
P
T
CM
C
B
D
D
j
CBO
CEO
EBO
:T
2
stg
SYMBOL
R
R
θJA
θJA
-55 to +150
LIMIT
13.6
100
500
7.5
1.1
8.8
1.7
50
10
4
VALUE
ZXT13N50DE6
113
73
mW/°C
mW/°C
UNIT
mA
°C
W
W
V
V
V
A
A
UNIT
°C/W
°C/W