NTE300 NTE ELECTRONICS, NTE300 Datasheet
NTE300
Manufacturer Part Number
NTE300
Description
TRANSISTOR,BJT,NPN,40V V(BR)CEO,1.5A I(C),TO-202
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE300.pdf
(2 pages)
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Absolute Maximum Ratings: (T
Collector - Base Voltage, V
Collector - Emitter Voltage, V
Emitter - Base Voltage, V
Collector Current, I
Collector Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector - Base Breakdown Voltage
Collector - Emitter Breakdown Voltage
Emitter - Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector - Emitter Saturation Voltage
Base - Emitter Voltage
Parameter
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
EBO
CBO
NTE300 (NPN) & NTE307 (PNP)
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Audio Power Amplifier
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
= +25 C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
V
Symbol
V
(BR)CBO
(BR)EBO
(BR)EBO
I
CE(sat)
I
V
h
CBO
EBO
FE
BE
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
I
V
V
V
I
V
C
C
E
C
CB
EB
CE
CE
= 1mA, I
= 10mA, R
= 1mA, I
= 1A, I
= 25V, I
= 5V, I
= 4V, I
= 4V, I
Test Conditions
B
C
C
E
C
= 50mA
C
E
= 0
= 0
= 0
= 500mA
= 50mA
BE
= 0
=
Min
50
40
55
5
-
-
-
-
Typ
0.7
-
-
-
-
-
-
-
- 55 to +150 C
Max Unit
300
1
1
1
-
-
-
-
+150 C
1.5A
V
V
V
V
V
50V
40V
A
A
7W
5V
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NTE300 Summary of contents
Page 1
... NTE300 (NPN) & NTE307 (PNP) Silicon Complementary Transistors Absolute Maximum Ratings: (T Collector - Base Voltage, V CBO Collector - Emitter Voltage, V Emitter - Base Voltage, V EBO Collector Current Collector Power Dissipation (T Operating Junction Temperature, T Storage Temperature Range, T Electrical Characteristics: (T Parameter Collector - Base Breakdown Voltage Collector - Emitter Breakdown Voltage ...
Page 2
C .500 (12.7) 1.200 (30.48) Ref .300 (7.62) .400 (10.16) Min C .100 (2.54) .180 (4.57) .132 (3.35) Dia .325 (9.52) .070 (1.78 Chamf .050 (1.27 .100 (2.54) ...