NTE29 NTE ELECTRONICS, NTE29 Datasheet - Page 2

• Manufacturer Part Number: NTE29
• Description: TRANSISTOR,BJT,NPN,80V V(BR)CEO,50A I(C),TO-3
• Manufacturer: NTE ELECTRONICS

Specifications of NTE29

• Rohs Compliant: YES

Note 1. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
ON Characteristics (Note 1)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter ON Voltage
Dynamic Characteristics
Current Gain-Bandwidth Product
Output Capacitance
Small-Signal Current Gain
.350 (8.89)
Parameter
.215 (5.45)
(10.92)
.430
.312 (7.93) Min
Emitter
.135 (3.45) Max
Base
Symbol
V
V
V
CE(sat)
BE(sat)
BE(on)
h
C
h
f
FE
C
T
ob
fe
1.187 (30.16)
.875 (22.2)
Dia Max
I
I
I
I
I
I
I
V
I
C
C
C
C
C
C
C
C
CB
Collector/Case
= 25A, V
= 50A, V
= 25A, I
= 50A, I
= 25A, I
= 25A, V
= 5A, V
= 10A, V
= 10V, I
(16.9)
.665
.063 (1.6) Max
Test Conditions
CE
B
B
B
CE
CE
CE
CE
.525 (13.35) R Max
= 2.5A
= 10A
= 2.5A
E
= 10V, f = 1MHz
= 0, f = 0.1MHz
= 2V
= 5V
= 2V
= 5V, f = 1kHz
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
Seating
Plane
Min Typ
15
15
5
-
-
-
-
2
-
-
-
-
-
-
-
-
-
-
1200
Max Unit
60
-
1
5
2
2
-
-
MHz
pF
V
V
V
V