NTE14 NTE ELECTRONICS, NTE14 Datasheet
NTE14
Manufacturer Part Number
NTE14
Description
TRANSISTOR,BJT,PNP,80V V(BR)CEO,700MA I(C),SIP
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE14.pdf
(2 pages)
Features:
D High Power Compact FTR Package: P
D High Breakdown Voltage: V
Absolute Maximum Ratings: (T
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Collector Dissipation, P
Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector Saturation Voltage
Transition Frequency
Output Capacitance
Parameter
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
High Power, Low Frequency Driver
EBO
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon PNP Transistor
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 80V
= +25 C unless otherwise specified)
V
V
V
Symbol
V
(BR)CEO
(BR)CBO
(BR)EBO
I
I
CE(sat)
h
C
CBO
EBO
f
FE
T
ob
C
NTE14
= 750mW
I
I
I
V
V
V
I
V
V
C
C
E
C
CB
EB
CE
CE
CB
= 2mA
= 50 A
= 500mA, I
= 50 A
= 4V
= 50V
= 3V, I
= 10V, I
= 10V, I
Test Conditions
C
E
E
= 100mA
B
= 50mA
= 0, f = 1MHz
= 50mA
Min
120
80
80
5
–
–
–
–
–
Typ Max Unit
100
0.2
14
–
–
–
–
–
–
–55 to +135 C
270
0.5
0.5
0.4
20
–
–
–
–
750mW
+135 C
700mA
MHz
pF
80V
80V
V
V
V
V
–
A
A
5V
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NTE14 Summary of contents
Page 1
... Electrical Characteristics: (T Parameter Collector–Emitter Breakdown Voltage Collector–Base Breakdown Voltage Emitter–Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector Saturation Voltage Transition Frequency Output Capacitance NTE14 Silicon PNP Transistor = 750mW C = 80V CEO = +25 C unless otherwise specified CEO ...
Page 2
E .100 (2.54) .051 (1.29) .280 (7.11) .185 (4. .022 (0.55) .138 (3.5) ...