MPSA92 MULTICOMP, MPSA92 Datasheet - Page 2

• Manufacturer Part Number: MPSA92
• Description: TRANSISTOR, PNP, TO-92
• Manufacturer: MULTICOMP

Specifications of MPSA92

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: 300V
• Power Dissipation Pd: 625mW
• Dc Collector Current: 500mA
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TO-92
• No. Of: RoHS Compliant
• Dc Current Gain Hfe: 40
• Rohs Compliant: Yes

Electrical Characteristics (T
*Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%.
Absolute Maximum Ratings (T
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Power Dissipation at T
Power Dissipation at T
Operating and Storage Junction Temperature Range
Thermal Resistance
Junction to Case
Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Cut off Current
Emitter-Cut off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Dynamic Characteristics
Transition Frequency
Collector Base Capacitance
MPSA92
Low Power Bipolar Transistors
Derate above 25°C
Derate above 25°C
Description
Description
a
C
= 25°C
= 25°C
a
= 25°C unless otherwise specified)
a
V
V
= 25°C unless otherwise specified)
Symbol
V
CE (sat)
BE (sat)
V
V
I
h
I
C
CEO *
CBO
EBO
CBO
EBO
FE
f
CB
T
*
*
*
I
I
V
I
C
C
I
I
C
C
C
CE
V
I
= 10mA, V
= 30mA, V
V
C
I
I
V
= 1mA, V
Page 2
Test Condition
E
CB
= 20mA, I
= 20mA, I
C
CB
= 100µA, I
EB
= 20V, I
= 10µA, I
f = 100MHz
= 1mA, I
= 200V, I
f = 1MHz
= 20V, I
= 3V, I
Symbol
T
R
R
V
V
V
j,
th (j-c)
th (j-a)
P
CEO
CBO
EBO
I
T
C
D
C
CE
stg
CE
CE
B
B
C
B
C
= 10mA
E
= 2mA
= 2mA
E
E
= 10V
= 0
= 0
= 10V
= 10V
= 0
= 0
= 0
= 0
Minimum
300
-55 to +150
5.0
25
40
25
50
-
-
-
-
-
Value
83.3
300
500
625
200
5.0
5.0
1.5
12
Maximum
250
100
0.5
0.9
6.0
-
-
-
-
-
-
-
11/05/08 V1.1
mW/°C
°C/W
Unit
mA
MHz
Unit
°C
W
V
nA
pF
V
V
-
-
-