MJ11033/ ON Semiconductor, MJ11033/ Datasheet

DARLINGTON TRANSISTOR, TO-3

MJ11033/

Manufacturer Part Number
MJ11033/
Description
DARLINGTON TRANSISTOR, TO-3
Manufacturer
ON Semiconductor
Datasheet

Specifications of MJ11033/

Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
120V
Power Dissipation Pd
300W
Dc Collector Current
50A
Operating Temperature Range
-55°C To +200°C
Transistor Case Style
TO-3
No. Of
RoHS Compliant
Dc Current Gain Hfe
400
Rohs Compliant
Yes
LAB
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS
V
V
V
I
I
I
P
T
Semelab plc.
SEME
C
CM
B
STG
CEO
CBO
EBO
tot
Pin 1 – Base
(0.161
, T
4.1
J
+0.4
–0
+0.016
–0
)
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Continuous Collector Current
Peak Collector Current
Base Current
Total Dissipation at T
Derate above 25°C
Operating and Storage Junction Temperature Range
Tolerance ±
1
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
(0.430)
10.92
25.4
(1.0)
Pin 2 – Emitter
(0.005)
0.127
sales@semelab.co.uk
2
TO–3
(0.157 ± 0.004)
unless otherwise stated
4.0 ± 0.1
(T
case
case
(0.459 ± 0.014)
= 25°C unless otherwise stated)
11.65 ± 0.35
Case – Collector
= 25°C
Website:
(0.354)
(0.062)
9.0
1.57
http://www.semelab.co.uk
FEATURES
• HIGH DC CURRENT GAIN
• CURVES TO 100A (Pulsed)
• DIODE PROTECTION TO RATED I
• MONOLITHIC CONSTRUCTION WITH
• JUNCTION TEMPERATURE TO +200°C
APPLICATIONS
general purpose amplifier applications.
BUILT-IN BASE – EMITTER SHUNT RESISTOR
For use as output devices in complementary
POWER TRANSISTOR
MJ11028
MJ11030
MJ11032
COMPLEMENTARY
NPN
DARLINGTON
MJ11028
MJ11029
60V
60V
H
H
FE
FE
= 1000 Min @ I
= 400 Min 0@ I
–55 to +175°C
1.71W/°C
MJ11030
MJ11031
300W
100A
90V
90V
50A
5V
2A
MJ11029
MJ11031
MJ11033
C
PNP
MJ11032
MJ11033
C
C
Prelim. 2/96
120V
120V
= 25A
= 50A

Related parts for MJ11033/

MJ11033/ Summary of contents

Page 1

SEME LAB MECHANICAL DATA Dimensions in mm (inches) 25.4 (1.0) 10.92 (0.430 +0.4 4.1 4.0 ± 0.1 –0 +0.016 (0.161 ) (0.157 ± 0.004) –0 0.127 Tolerance ± unless otherwise stated (0.005) TO–3 Pin 1 – Base Pin ...

Page 2

SEME LAB Parameter OFF CHARACTERISTICS Collector – Emitter V (BR)CEO* Breakdown Voltage Collector – Emitter I CER Leakage Current I Emitter Cut–Off Current EBO Collector – Emitter I CEO Leakage Current ON CHARACTERISTICS h DC Current Gain FE* Collector – ...

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