FZT857 Diodes Inc, FZT857 Datasheet - Page 2

• Manufacturer Part Number: FZT857
• Description: TRANSISTOR, NPN, SOT-223
• Manufacturer: Diodes Inc

Specifications of FZT857

• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 300V
• Power Dissipation Pd: 3W
• Dc Collector Current: 3.5A
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-223
• No. Of: RoHS Compliant
• Dc Current Gain Hfe: 200
• Rohs Compliant: Yes

ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width=300
Spice parameter data is available upon request for this device
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
Transition Frequency
Output Capacitance
Switching Times
SYMBOL
V
V
V
V
I
I
R
I
V
V
V
h
f
C
t
t
CBO
CER
EBO
T
on
off
FE
(BR)CBO
(BR)CER
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo

1 k

MIN.
350
350
300
6
100
100
15
amb
TYP.
475
475
350
8
200
200
25
15
80
11
100
5300


= 25°C unless otherwise stated)
s . Duty cycle
MAX. UNIT
50
1
50
1
10
100
155
230
345
1250
1.12
300

2 %
V
V
V
V
nA


nA


nA
mV
mV
mV
mV
mV
V
MHz
pF
ns
ns
A
A
CONDITIONS.
I
I
I
I
V
V
T
V
V
T
V
I
I
I
I
I
I
I
I
I
I
I
f=50MHz
V
I
I
C
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
B2
amb
amb
CB
CB
CB
CB
EB
CB
FZT857
=100
=100
=10mA*
=500mA, I
=1A, I
=2A, I
=3.5A, I
=3.5A, I
=10mA, V
=500mA, V
=2A, V
=3A, V
==100mA, V
=250mA, I
=1
=3.5A, V
=25mA, V
=6V
=300V
=300V,
=300V
=300V,
=20V, f=1MHz


=100°C
=100°C
A , RB




B
B
A
A
CE
CE
=100mA*
=200mA*
B
B
=10V*
=10V*
CE
=600mA*
=600mA*
 
CE
B
B1
=10V*
CC
CE
1 k
=50mA*
=5V
=25mA
CE
=50V
=10V*

=10V