BD180 MULTICOMP, BD180 Datasheet - Page 2
BD180
Manufacturer Part Number
BD180
Description
TRANSISTOR, PNP, TO-126
Manufacturer
MULTICOMP
Datasheet
1.BD180.pdf
(4 pages)
Specifications of BD180
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
80V
Power Dissipation Pd
30W
Dc Collector Current
20A
Transistor Case Style
TO-126
No. Of Pins
3
Continuous Collector Current Ic Max
3A
Dc Current Gain Hfe
40
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BD180G
Manufacturer:
ON Semiconductor
Quantity:
180
Part Number:
BD180G
Manufacturer:
ON/安森美
Quantity:
20 000
Absolute Maximum Ratings
Electrical Characteristics (T
*Pulse Test : Pulse Width = 300µs, Duty Cycle = 1.5%.
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
Collector Current
Collector Peak Current
Power Dissipation at T
Derate above 25°C
Power Dissipation at T
Operating and Storage Junction
Temperature Range
Thermal Characteristics
Junction to Ambient in Free Air
Junction to Case
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Sustaining Voltage
Collector Emitter Saturation Voltage
Base Emitter On Voltage
DC Current Gain
Transition Frequency
BD180
Medium Power Transistors
Description
Description
a
C
= 25°C
= 25°C
C
= 25°C unless specified otherwise)
*h
*V
*V
Symbol
*V
FE
CEO (sus)
CEO (sat)
I
*h
I
BE (on)
CBO
EBO
f
Group
T
FE
I
I
I
C
C
C
I
= 250mA, V
I
I
I
V
C
= 150mA, V
= 150mA, V
C
C
C
V
Page 2
Test Condition
CB
= 100mA, I
EB
= 1A, V
= 1A, V
= 1A, I
Only BD179
= 80V, I
= 5V, I
Symbol
T
R
R
V
V
V
j,
I
th (j-a)
th (j-c)
P
CEO
CBO
EBO
I
CM
B
T
C
CE
CE
D
stg
= 0.1A
CE
C
CE
CE
E
B
= 2V
= 2V
= 0
= 0
= 10V
= 0
= 2V
= 2V
-10
-16
-6
-
-
-
-
-
-
-65 to +150
BD180
1.25
4.16
100
5.0
3.0
7.0
80
10
30
Minimum Maximum
100
3.0
80
40
15
40
63
-
-
-
-
100
160
250
-
09/05/08 V1.1
mW/°C
°C/W
Unit
°C
W
W
V
A
mW/°C
Unit
W
V
A