2N5550 NTE ELECTRONICS, 2N5550 Datasheet
2N5550
Manufacturer Part Number
2N5550
Description
T-NPN SI- HIV AMP
Manufacturer
NTE ELECTRONICS
Datasheet
1.2N5550.pdf
(2 pages)
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NSC
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Part Number:
2N5550-AT
Manufacturer:
KEC
Quantity:
94 836
1997. 5. 2
GENERAL PURPOSE APPLICATION.
HIGH VOLTAGE APPLICATION.
FEATURES
MAXIMUM RATING (Ta=25 )
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
High Collector Breakdwon Voltage
Low Leakage Current.
Low Saturation Voltage
Low Noise : NF=10dB (Max.)
: V
: I
: V
CBO
CHARACTERISTIC
CBO
CE(sat)
=100nA(Max.), V
=160V, V
=0.25V(Max.), I
CEO
=140V
CB
Revision No : 0
C
SEMICONDUCTOR
=100V
=50mA, I
TECHNICAL DATA
SYMBOL
B
=5mA
V
V
V
T
P
I
I
T
CBO
CEO
EBO
stg
C
B
C
j
RATING
-55 150
160
140
600
100
625
150
6
UNIT
mW
mA
mA
V
V
V
EPITAXIAL PLANAR NPN TRANSISTOR
K
D
F
1
B
2
3
H
G
F
E
2N5550
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
C
N
DIM
M
A
B
C
D
E
F
G
H
K
L
N
J
MILLIMETERS
14.00 0.50
4.70 MAX
4.80 MAX
3.70 MAX
0.55 MAX
0.45 MAX
0.45
1.00
1.27
0.85
0.45
2.30
1.00
+ _
1/2
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2N5550 Summary of contents
Page 1
... Revision TECHNICAL DATA =5mA B SYMBOL RATING UNIT V 160 V CBO V 140 V CEO EBO I 600 100 625 150 j T -55 150 stg 2N5550 EPITAXIAL PLANAR NPN TRANSISTOR DIM MILLIMETERS A 4.70 MAX 4.80 MAX G C 3.70 MAX 14.00 0.50 K 0.55 MAX 0.45 MAX EMITTER 2. BASE 3 ...
Page 2
... Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Input Capacitance Small-Signal Current Gain Noise Figure * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. 1997 Revision 2N5550 SYMBOL TEST CONDITION V =100V CBO V =100V, I =0, Ta=100 CB ...