TIP35C MULTICOMP, TIP35C Datasheet - Page 2

• Manufacturer Part Number: TIP35C
• Description: BIPOLAR TRANSISTOR, NPN, 100V
• Manufacturer: MULTICOMP

Specifications of TIP35C

• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 100V
• Transition Frequency Typ Ft: 3MHz
• Power Dissipation Pd: 125W
• Dc Collector Current: 25A
• Dc Current Gain Hfe: 75
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal Characteristics
Electrical Characteristics (T
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%
(2) f
Thermal Resistance Junction to Case
TIP35C, 36C
Complementary Power Transistors
OFF Characteristics
Collector-Emitter Sustaining Voltage (1)
(I
Collector Cut off Current
(V
Collector Cut off Current
(V
Emitter Cut off Current
ON Characteristics (1)
DC Current Gain
(I
(I
Collector-Emitter Saturation Voltage
(I
(I
Base-Emitter On Voltage
(I
(I
Dynamic Characteristics
Current Gain Bandwidth Product (2)
(I
Small-Signal Current Gain
(I
(V
T
C
C
C
C
C
C
C
C
C
CE
CE
EB
= h
= 30mA, I
= 1.5A, V
= 15A, V
= 15A, I
= 25A, I
= 15A, V
= 25A, V
= 1.0mA, V
= 1.0A, V
= 60V, I
= 100V, V
= 5.0V, I
fe
 • f
Characteristic
B
B
CE
CE
CE
CE
CE
B
B
= 1.5A)
= 5.0A)
test
C
CE
= 0)
= 0)
EB
= 4.0V)
= 4.0V)
= 4.0V)
= 4.0V)
= 10V, f = 1kHz)
= 0)
Figure - 1 Power Derating
= 10V, f
= 0)
T
C
, Temperature (°C)
TEST
Characteristic
= 1MHz)
C
= 25°C unless otherwise noted)
Symbol
Rθjc
Maximum
1.0
Page 2
°C/W
Unit
V
Symbol
V
CEO(SUS)
V
I
CE(sat)
I
I
BE(on)
h
CEO
EBO
CES
h
f
FE
T
fe
Minimum
100
3.0
25
15
25
-
-
-
-
-
Maximum
1.0
0.7
1.0
1.8
4.0
2.0
4.0
75
-
-
-
31/05/05 V1.0
MHz
Unit
mA
V
V
-