TIP34C NTE ELECTRONICS, TIP34C Datasheet
TIP34C
Manufacturer Part Number
TIP34C
Description
BIPOLAR TRANSISTOR, PNP, -100V
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE390.pdf
(2 pages)
Specifications of TIP34C
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
-100V
Transition Frequency Typ Ft
3MHz
Power Dissipation Pd
80W
Dc Collector Current
-10A
Dc Current Gain Hfe
40
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TIP34C
Manufacturer:
BOURNS
Quantity:
10 000
Part Number:
TIP34C
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
TIP34C-O-U
Manufacturer:
KEC
Quantity:
4 866
Description:
The NTE390 (NPN) and NTE391 (PNP) are silicon compelementary transistors in a TO218 type package
designed for general purpose power amplifier and switching applications.
Features:
D 10A Collector Current
D Low Leakage Current: I
D Excellent DC Gain: h
D High Current Gain Bandwidth Product: h
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Continuous Base Current, I
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Note 1. Pulse Test: Pulse Width = 10ms, Duty Cycle
Continuous
Peak (Note 1)
Derate Above 25 C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
EB
FE
CB
C
NTE390 (NPN) & NTE391 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
CEO
= 40 Typ @ 3A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
= 0.7mA @ V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
General Purpose
D
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
fe
thJA
CE
= 3 Min @ I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 60V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10%.
C
= 500mA, f = 1MHz
–65 to +150 C
–65 to +150 C
0.64W/ C
1.56 C/W
35.7 C/W
100V
100V
80W
10A
15A
5V
3A
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TIP34C Summary of contents
Page 1
NTE390 (NPN) & NTE391 (PNP) Silicon Complementary Transistors Description: The NTE390 (NPN) and NTE391 (PNP) are silicon compelementary transistors in a TO218 type package designed for general purpose power amplifier and switching applications. Features: D 10A Collector Current D Low ...
Page 2
Electrical Characteristics: (T Parameter OFF Characteristics Collector–Emitter Sustaining Voltage V Collector–Emitter Cutoff Current Emitter–Base Cutoff Current ON Characteristics (Note 2) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter ON Voltage Dynamic Characteristics Small–Signal Current Gain Current–Gain Bandwidth Product Note 2. Pulse ...