TIP2955 MULTICOMP, TIP2955 Datasheet - Page 2

• Manufacturer Part Number: TIP2955
• Description: BIPOLAR TRANSISTOR, PNP -70V TO-220
• Manufacturer: MULTICOMP

Specifications of TIP2955

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -60V
• Transition Frequency Typ Ft: 2.5MHz
• Power Dissipation Pd: 90W
• Dc Collector Current: 15A
• Dc Current Gain Hfe: 100
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal Characteristics
Electrical Characteristics (T
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%
(2) f
Thermal Resistance Junction to Case
TIP3055, 2955
Complementary Power Transistors
OFF Characteristics
Collector-Emitter Sustaining Voltage (1)
(I
Collector Cut off Current
(V
Collector Cut off Current
(V
Collector Cut off Current
(V
Emitter Cut off Current
ON Characteristics (1)
DC Current Gain
(I
(I
Collector-Emitter Saturation Voltage
(I
(I
Base-Emitter On Voltage
(I
Dynamic Characteristics
Current Gain Bandwidth Product
(I
Small-Signal Current Gain
(I
(V
T
C
C
C
C
C
C
C
C
CE
CE
CE
EB
= h
= 30mA, I
= 4.0A, V
= 10A, V
= 4.0A, I
= 10A, I
= 4.0A, V
= 500mA, V
= 1.0A, V
= 70V, R
= 30V, I
= 100V, V
= 7.0V, I
fe
 • f
Characteristic
B
B
CE
CE
CE
CE
B
B
= 3.3A)
test
= 0.4A)
BE
C
= 0)
= 0)
BE(off)
= 4.0V)
CE
= 4.0V)
= 4.0V)
= 4V, f = 1kHz)
= 0)
Figure - 1 Power Derating
= 100Ω)
= 10V, f = 1.0MHz)
T
= 1.5V)
C
Characteristic
, Temperature (°C)
C
= 25°C unless otherwise noted)
Symbol
Rθjc
Maximum
1.39
Page 2
V
Symbol
V
CEO(SUS)
V
I
I
I
CE(sat)
BE(on)
I
h
CER
CEO
EBO
CEV
h
f
FE
°C/W
T
fe
Unit
Minimum
5.0
2.5
60
20
15
-
-
-
-
-
-
Maximum
100
1.0
0.7
5.0
1.1
3.0
1.8
-
-
-
31/05/05 V1.0
MHz
Unit
mA
V
V
-
-