NTE61 NTE ELECTRONICS, NTE61 Datasheet - Page 2

• Manufacturer Part Number: NTE61
• Description: BIPOLAR TRANSISTOR, PNP, -140V TO-3
• Manufacturer: NTE ELECTRONICS

Specifications of NTE61

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -140V
• Transition Frequency Typ Ft: 2MHz
• Power Dissipation Pd: 200W
• Dc Collector Current: 17A
• Dc Current Gain Hfe: 25
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics (Cont’d): (T
Second Breakdown
Second Breakdown Collector Current
ON Characteristics
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter On Voltage
Dynamic Characteristics
Current Gain–Bandwidth Product
Output Capacitance
with Base Forward Bias
.350 (8.89)
Parameter
.215 (5.45)
(10.92)
.430
.312 (7.93) Min
Emitter
.135 (3.45) Max
Base
Symbol
V
V
CE(sat)
BE(on)
h
C
I
S/b
f
FE
T
ob
C
V
V
V
I
V
V
V
C
CE
CE
CE
CE
CE
CB
1.187 (30.16)
= +25 C unless otherwise specified)
= 5A, I
.875 (22.2)
= 50V, t = 1s (non–repetitive)
= 100V, t = 1s (non–repetitive)
= 2V, I
= 2V, I
= 10V, I
= 10V, I
Dia Max
Collector/Case
B
C
= 500mA
C
Test Conditions
C
E
(16.9)
= 5A
= 5A
.665
.040 (1.02)
= 0, f
= 500mA, f
test
.525 (13.35) R Max
= 1MHz
test
= 0.5MHz
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
Seating
Plane
Min
25
5
1
–
–
2
–
Typ
–
–
–
–
–
–
–
1000
Max
150
–
–
1
2
–
MHz
Unit
pF
V
V
A
A