NTE126 NTE ELECTRONICS, NTE126 Datasheet
NTE126
Manufacturer Part Number
NTE126
Description
BIPOLAR TRANSISTOR, PNP, -15V TO-18
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE126.pdf
(2 pages)
Specifications of NTE126
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
-15V
Transition Frequency Typ Ft
300MHz
Power Dissipation Pd
20W
Dc Collector Current
1A
Dc Current Gain Hfe
200
Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Total Device Dissipation (T
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Junction Temperature Range, T
Electrical Characteristics: (T
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector–Latch–Up Voltage
Collector–Emitter Cutoff Current
Collector–Base Cutoff Current
DC Current Gain
Collector–Emitter Saturation Voltage
(I
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
C
E
C
C
C
C
C
C
CC
CE
CB
Derate above 25 C
Derate above 25 C
= 100 Adc, I
= 100 Adc, I
= 10mAdc, V
= 50mAdc, V
= 100mAdc, V
= 10mAdc, I
= 50mAdc, I
= 100mAdc, I
= 15Vdc)
= 6Vdc, I
= 11.5 Vdc)
E
B
B
C
E
= 0)
CE
CE
B
= 1mAdc)
= 5mAdc)
CE
= 0)
= 0)
= 10mAdc)
= 0.3Vdc)
= 1Vdc)
for High–Speed Switching Applications
EB
= 1Vdc)
Parameter
CB
A
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Germanium Mesa Transistor, PNP,
CE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
stg
D
D
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE126
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
V
BV
BV
LV
I
CE(sat)
I
h
CBO
CES
CEX
FE
CBO
EBO
11.5
Min
2.5
15
40
40
40
–
–
–
–
–
–65 to +100 C
–65 to +100 C
Max
0.18
0.35
0.60
100
3.0
–
–
–
–
–
–
2.0mW/ C
4.0mW/ C
150mW
300mW
2.5Vdc
15Vdc
15Vdc
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
–
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NTE126 Summary of contents
Page 1
... 50mAdc 1Vdc 100mAdc 1Vdc Collector–Emitter Saturation Voltage (I = 10mAdc 1mAdc 50mAdc 5mAdc 100mAdc 10mAdc NTE126 Germanium Mesa Transistor, PNP +25 C +25 C stg = +25 C unless otherwise specified) A 15Vdc 15Vdc 2.5Vdc 150mW 2.0mW/ C 300mW 4.0mW/ C –65 to +100 C –65 to +100 C Symbol Min Max ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Base–Emitter Saturation Voltage (I = 10mAdc 1mAdc 50mAdc 5mAdc 100mAdc 10mAdc Current–Gain–Bandwidth Product (I = 20mAdc 1.0Vdc, ...