MJE3055T MULTICOMP, MJE3055T Datasheet - Page 4

BIPOLAR TRANSISTOR, NPN, 60V TO-220

MJE3055T

Manufacturer Part Number
MJE3055T
Description
BIPOLAR TRANSISTOR, NPN, 60V TO-220
Manufacturer
MULTICOMP
Datasheet

Specifications of MJE3055T

Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
60V
Transition Frequency Typ Ft
2MHz
Power Dissipation Pd
75mW
Dc Collector Current
10A
Dc Current Gain Hfe
100
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MJE3055T
Manufacturer:
TE
Quantity:
30 000
Part Number:
MJE3055T
Manufacturer:
ST
Quantity:
10 000
Part Number:
MJE3055T
Manufacturer:
ST
Quantity:
7 595
Part Number:
MJE3055T
Manufacturer:
ST
0
Part Number:
MJE3055T
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
MJE3055T
Manufacturer:
ST/意法
Quantity:
500
Company:
Part Number:
MJE3055T
Quantity:
20 000
Part Number:
MJE3055T/ MJE2955
Manufacturer:
FSC
Quantity:
20 000
Part Number:
MJE3055TG
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
MJE3055TTU
Quantity:
2 000
MJE2955T, 3055T
Complementary Power Transistors
Figure - 3 Active-Region Safe Operating Area
MJE2955T
Figure - 2 “ON” Voltage
Page 4
There are two limitations on the power handling ability of a
transistor: average junction temperature and second
breakdown safe operating area curves indicate I
the transistor that must be observed for reliable operation i.e.,
the transistor must not be subjected to greater dissipation than
the curves indicate.
The data of Figure - 3 is based on T
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
At high case temperatures, thermal limitation will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
MJE3055T
J(PK)
= 150°C; T
31/05/05 V1.0
C
J(PK)
-V
CE
C
≤150°C.
is
limits of

Related parts for MJE3055T