MJE2955T MULTICOMP, MJE2955T Datasheet

BIPOLAR TRANSISTOR, NPN, 60V TO-220

MJE2955T

Manufacturer Part Number
MJE2955T
Description
BIPOLAR TRANSISTOR, NPN, 60V TO-220
Manufacturer
MULTICOMP
Datasheet

Specifications of MJE2955T

Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
60V
Transition Frequency Typ Ft
2MHz
Power Dissipation Pd
75W
Dc Collector Current
10A
Dc Current Gain Hfe
100
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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MJE2955T, 3055T
Complementary Power Transistors
Pin 1. Base
2. Collector
3. Emitter
4. Collector (Case).
Complementary Silicon Power Transistors are designed for use in general-purpose
amplifier and switching applications.
Features:
• Power dissipation-P
• DC current gain hFE = 20 (Minimum) at I
• V
Dimensions
CE(sat)
G
M
O
A
B
C
D
E
F
H
K
J
L
I
= 1.1V (Maximum) at I
Page 1
Minimum
14.68
13.06
9.78
5.01
3.57
2.42
1.12
0.72
4.22
1.14
2.20
0.33
2.48
3.70
Dimensions : Millimetres
D
= 75W at T
Maximum
C
15.31
10.42
14.62
6.52
4.07
3.66
1.36
0.96
4.98
1.38
2.97
0.55
2.98
3.90
= 4.0A, I
C
= 25°C.
C
B
= 400mA.
= 4.0A.
MJE2955T
PNP
Complemetary Silicon
Power Transistors
10 Ampere
75 Watts
60 Volts
TO-220
31/05/05 V1.0
MJE3055T
NPN

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MJE2955T Summary of contents

Page 1

... MJE2955T, 3055T Complementary Power Transistors Pin 1. Base 2. Collector 3. Emitter 4. Collector (Case). Complementary Silicon Power Transistors are designed for use in general-purpose amplifier and switching applications. Features: • Power dissipation-P = 75W • DC current gain hFE = 20 (Minimum • 1.1V (Maximum 4.0A, I CE(sat) C Dimensions Minimum ...

Page 2

... MJE2955T, 3055T Complementary Power Transistors Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Base Current Total Power Dissipation 25°C C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Characteristic Characteristic Thermal Resistance Junction to Case Figure - 1 Power Derating ...

Page 3

... MJE2955T, 3055T Complementary Power Transistors Electrical Characteristics (T Parameter Off Characteristics Collector-Emitter Sustaining Voltage ( 200mA Collector Cut off Current (V = 30V Collector Cut off Current (V = 70V 1.5V) CE BE(off 70V 1.5V 150°C) CE BE(off) C Collector Cut off Current (V = 70V 70V 150° Emitter Cut off Current ( ...

Page 4

... MJE2955T, 3055T Complementary Power Transistors MJE2955T Figure - 3 Active-Region Safe Operating Area Figure - 2 “ON” Voltage There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicate I the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate ...

Page 5

... MJE2955T, 3055T Complementary Power Transistors Figure - 4 DC Current Gain Specifications I V C(av) CEO maximum maximum (A) ( tot minimum at 25° ( Page 5 Type Part Number NPN MJE3055T PNP MJE2955T 31/05/05 V1.0 ...

Page 6

... MJE2955T, 3055T Complementary Power Transistors Notes: International Sales Offices: AUSTRALIA – Farnell InOne Tel No 9645 8888 Fax No 9644 7898 AUSTRIA – Farnell InOne Tel No 662 2180 680 Fax No 662 2180 670 BELGIUM – Farnell InOne Tel No 475 2810 Fax No 227 3648 BRAZIL – ...

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