MJ11033 MULTICOMP, MJ11033 Datasheet

BIPOLAR TRANSISTOR, PNP, -120V TO-3

MJ11033

Manufacturer Part Number
MJ11033
Description
BIPOLAR TRANSISTOR, PNP, -120V TO-3
Manufacturer
MULTICOMP
Datasheet

Specifications of MJ11033

Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
120V
Power Dissipation Pd
300W
Dc Collector Current
50A
Dc Current Gain Hfe
1000
Operating Temperature Range
-65°C To +200°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MJ11033G
Manufacturer:
ON
Quantity:
2 000
Part Number:
MJ11033G
Manufacturer:
NUVOTON
Quantity:
20 000
Company:
Part Number:
MJ11033G
Quantity:
1 008
Maximum Ratings
MJ11032, 11033
Darlington Power Transistors
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current
Total Power Dissipation at T
Derate above 25°C
Operating and Storage Junction Temperature Range
Pin 1. Base
2. Emitter
Collector(Case)
-Peak
Characteristic
C
= 25°C
Dimensions
C
D
G
H
A
B
E
F
K
J
I
Complementary Silicon Power Darlington Transistors are designed for use as
output devices in complementary general purpose amplifier applications.
Features:
• • High Gain Darlington performance.
• • High DC Current Gain: h
• • Monolithic construction with built-in Base-Emitter Shunt Resistor.
Minimum
38.75
19.28
11.18
25.20
29.90
16.64
10.67
7.96
0.92
1.38
3.88
Dimensions : Millimetres
Page 1
T
Symbol
J
V
V
V
, T
I
P
CEO
CBO
EBO
CM
I
I
C
B
Maximum
D
STG
39.96
22.23
12.19
26.67
30.40
17.30
11.18
9.28
1.09
1.62
4.36
h
-65 to +200
FE
FE
Rating
= 1000 (Minimum) at I
1.71
= 400 (Minimum) at I
120
100
300
5.0
2.0
50
MJ11032
NPN
Darlington Transistors
Complementary
Silicon Power
W/°C
Unit
50 Ampere
300 Watts
°C
W
120 Volts
V
A
C
TO-3
C
= 50A.
= 25A,
MJ11033
PNP
31/05/05 V1.0

Related parts for MJ11033

MJ11033 Summary of contents

Page 1

... Symbol V CEO V CBO V EBO STG Page 1 = 1000 (Minimum 25A 400 (Minimum 50A NPN PNP MJ11032 MJ11033 50 Ampere Complementary Silicon Power Darlington Transistors 120 Volts 300 Watts TO-3 Rating Unit 120 V 5.0 50 100 A 2.0 300 W 1.71 W/°C -65 to +200 °C 31/05/05 V1.0 ...

Page 2

MJ11032, 11033 Darlington Power Transistors Thermal Characteristics Characteristic Thermal Resistance Junction to Case Figure - 1 Power Derating T , Temperature (°C) C Electrical Characteristics (T Characteristic OFF Characteristics Collector-Emitter Sustaining Voltage ( 100mA ...

Page 3

... Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%. = h  • test NPN MJ11032 DC Current Gain I , Collector Current (AMP 25°C unless otherwise noted) C Symbol |h Internal Schematic Diagram PNP MJ11033 Page 3 Minimum Maximum | 4 Current Gain I , Collector Current (AMP) C Unit - 31/05/05 V1.0 ...

Page 4

... P FE tot minimum at 25° 25A (W) C 1000 300 Page 4 “ON” Voltages I , Collector Current (AMP 200°C; T J(PK) J(PK) Package Type Part Number NPN MJ11032 TO-3 PNP MJ11033 limits of the transistor is variable C ≤200°C, At high case 31/05/05 V1.0 ...

Page 5

... Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. © Premier Farnell plc 2004. ...

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