FMMT560 Diodes Inc, FMMT560 Datasheet
FMMT560
Manufacturer Part Number
FMMT560
Description
TRANSISTOR, PNP, 500V, 150mA, 500mW, SOT-23
Manufacturer
Diodes Inc
Datasheet
1.FMMT560.pdf
(2 pages)
Specifications of FMMT560
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
500V
Transition Frequency Typ Ft
60MHz
Power Dissipation Pd
500mW
Dc Collector Current
150mA
No. Of Pins
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FMMT560T
Manufacturer:
ZETEX/DIODES
Quantity:
20 000
Company:
Part Number:
FMMT560TA
Manufacturer:
ZETEX
Quantity:
21 000
Part Number:
FMMT560TA
Manufacturer:
DIODES/美台
Quantity:
20 000
SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 1 – NOVEMBER 1998
FEATURES
*
*
PARTMARKING DETAIL –
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
* Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation
Operating and Storage Temperature Range
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn On Voltage
Static Forward Current Transfer
Ratio
Transition Frequency
Output Capacitance
Switching times
Excellent h
Low Saturation voltages
FE
characterisristics up to I
560
SYMBOL MIN.
V
V
V
I
I
V
V
V
h
f
C
t
t
CBO
EBO
T
on
off
FE
(BR)CBO
BR(CEO)
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
; I
CES
C
amb
-500
-500
-5
100
80
15 typ
60
110 typ.
1.5 typ.
=50mA
SYMBOL
T
V
V
V
I
I
P
CM
C
tot
j
CBO
CEO
EBO
= 25°C).
:T
stg
MAX.
-100
-100
-0.2
-0.5
-0.9
-0.9
300
300
8
UNIT
V
V
V
nA
nA
V
V
V
V
MHz
pF
ns
s
-55 to +150
VALUE
-500
-500
-500
-150
500
-5
CONDITIONS.
I
I
I
V
V
I
I
I
I
I
I
I
V
f=50MHz
V
V
I
C
C
E
C
C
C
C
C
C
C
B1
FMMT560
=-100 A
CB
EB
CE
CB
CE
=-100 A
=-10mA*
=-20mA, I
=-50mA, I
=-50mA, I
=-1mA, V
=-50mA, V
=-100mA, V
C
=-50mA, V
=-5mA, I
=-500V; V
=-5V
=-20V, I
=-20V, f=1MHz
=-100V, I
C
CE
B2
B
B
B
=-10mA,
C
CE
=-2mA *
=-10mA *
=-10mA *
CE
=10mA
CE
=-50mA,
=-10V
CE
=-10V *
=-10V *
=-500V
UNIT
mW
=-10V*
mA
mA
°C
V
V
V
B
E
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FMMT560 Summary of contents
Page 1
... CBO CES I -100 EBO V -0.2 CE(sat) -0.5 V -0.9 BE(sat) V -0.9 BE(on) h 100 300 FE 80 300 15 typ obo t 110 typ 1.5 typ. off FMMT560 C B VALUE UNIT -500 V -500 -500 mA -150 mA 500 mW -55 to +150 °C UNIT CONDITIONS =-100 =-10mA =-100 =-500V; V ...
Page 2
... FMMT560 TYPICAL CHARACTERISTICS +25°C 1.6 1.2 IC/IB=10 IC/IB=20 0.8 IC/IB=50 0 10m I - Collector Current ( CE(sat) VCE=5V 240 +100°C 160 +25°C 80 -55° 10m I - Collector Current ( 1.0 0.75 0.5 0. 10m I - Collector Current ( BE(on) 0.8 0.6 0.4 0.2 0 100m C 1.0 0.8 0.6 0.4 ...