2N3773 MULTICOMP, 2N3773 Datasheet - Page 4

BIPOLAR TRANSISTOR, NPN, 140V

2N3773

Manufacturer Part Number
2N3773
Description
BIPOLAR TRANSISTOR, NPN, 140V
Manufacturer
MULTICOMP
Datasheets

Specifications of 2N3773

Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
140V
Power Dissipation Pd
150W
Dc Collector Current
16A
Dc Current Gain Hfe
15
Operating Temperature Range
-65°C To +200°C
No. Of Pins
2
Transition Frequency Typ Ft
6MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Disclaimer This data sheet and its contents (the "Information") belong to the Premier Farnell Group (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes
in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied.
The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data
sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage
resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded.
This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. SPC Multicomp is the registered trademark of the Group. © Premier Farnell plc 2008.
1165893
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Transistor, NPN, TO-3
Description
V
CE
Forward Bias Safe Operating Area
, Collector-Emitter Voltage (Volts)
Collector Saturation Region
I
B
, Base Current (Amperes)
Part Number
2N3773
Page <4>
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate I
that must be observed for reliable operation i.e., the transistor must
not be subjected to greater dissipation than curves indicate.
The data is based on T
conditions. Second breakdown pulse limits are valid for duty cycles
to 10% provided T
limitations will reduce the power that can be handled to values less
than the limitations imposed by second breakdown.
I
C
J (PK)
T
, Collector Current (Amperes)
C
, Case Temperature (°C)
J (PK)
< 200°C. At high case temperatures, thermal
Power Derating
“On” Voltage
= 200°C; T
C
- V
C
CE
is variable depending on
limits of the transistor
22/10/08 V1.1

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