NTE5593 NTE ELECTRONICS, NTE5593 Datasheet
NTE5593
Manufacturer Part Number
NTE5593
Description
SILICON CONTROLLED RECTIFIER,1.6kV V(DRM),550A I(T),TO-209var3/4
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE5593.pdf
(2 pages)
Specifications of NTE5593
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Features:
D Low On–State Voltage
D High di/dt
D High dv/dt
D Excellent Surge and I
Applications:
D Power Supplies
D Battery Chargers
D Motor Controls
Absolute Maximum Ratingsand Electrical Characteristics:
Repetitive Peak Voltages, V
RMS On–State Current, I
Average On–State Current, I
Peak One–Cycle, Non–Repetitive On–State Surge Current, I
Critical Rate–of–Rise of On–State Current, di/dt
I
Peak Gate Power Dissipation, P
Average Gate Power Dissipation, P
Peak On–State Voltage (I
Peak Forward Leakage Current (At V
Peak Reverse Leakage Current (At V
Gate Current to Trigger (V
Gate Voltage to Trigger (V
Non–Triggering Gate Voltage (At V
2
t fo Fusing (8.2ms), I
NTE5587
NTE5589
NTE5593
50Hz
60Hz
Repetitive
Non–Repetitive
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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2
t
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T(RMS)
TM
t Ratings
D
D
for Phase Control Applications
DRM
= 12V, T
= 12V, T
NTE5587, NTE5589, NTE5593
T(AV)
= 625A, T
Silicon Controlled Rectifier
GM
& V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DRM
G(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RRM
J
J
DRM
RRM
= +25 C), I
= +25 C), V
J
, T
= +25 C), V
, T
, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +125 C), V
J
J
= +125 C), I
= +125 C), I
GT
GT
TM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GDM
DRM
RRM
TSM
. . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . .
416,000A
10,000A
150A/ s
800A/ s
150mA
1200V
1600V
9100A
30mA
30mA
0.15V
600V
550A
16W
1.4V
2
350
sec
3W
3V
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NTE5593 Summary of contents
Page 1
... Gate Current to Trigger (V D Gate Voltage to Trigger (V D Non–Triggering Gate Voltage (At V NTE5587, NTE5589, NTE5593 Silicon Controlled Rectifier & V DRM RRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Absolute Maximum Ratingsand Electrical Characteristics (Cont’d): Peak Forward Gate Current, I Peak Reverse Gate Voltage, V Typical Turn–Off Time 250A, di /dt = 25A/ s, re–applied, dv/dt = 20V/ s, linear to 0. Typical ...