NTE5567 NTE ELECTRONICS, NTE5567 Datasheet - Page 2

• Manufacturer Part Number: NTE5567
• Description: SILICON CONTROLLED RECTIFIER,200V V(DRM),80A I(T),TO-208AC
• Manufacturer: NTE ELECTRONICS

Specifications of NTE5567

• Rohs Compliant: YES

Maximum I
Low Level Value of Threshold Voltage (16.7% x π x I
High Level Value of Threshold Voltage (π x I
Low Level Value of On−State Slope Resistance (16.7% x π x I
High Level Value of On−State Slope Resistance (π x I
Maximum On−State Voltage (I
Maximum Holding Current (T
Latching Current (Anode Supply 6V, Resistive Load), I
Maximum Rate of Rise of Turned−On Current, di/dt
Typical Delay Time, t
(T
Typical Turn−Off Time, t
(T
Maximum Critical Rate of Rise of Off−State Voltage, dv/dt
Maximum Peak Gate Power (t
Maximum Average Gate Power, P
Maximum Peak Positive Gate Current, I
Maximum Peak Positive Gate Voltage, +V
Maximum Peak Negative Gate Voltage, −V
DC Gate Current Required to Trigger (6V Anode−to−Cathode Applied), I
DC Gate Voltage Required to Trigger (6V Anode−to−Cathode Applied, T
DC Gate Current Not to Trigger (Rated V
DC Gate Voltage Not to Trigger (Rated V
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance
Mounting Torque (Non−Lubricated Threads), T
Note 1. Units may be broken over non−repetitively in the off−state direction without damage, if di/dt
Note 2. For voltage pulses with t
C
C
= +25°C, V
= +125°C, I
NTE5567, NTE5568, NTE5569
NTE5571
NTE5567, NTE5568, NTE5569
NTE5571
NTE5567, NTE5568, NTE5569
NTE5571
NTE5567, NTE5568, NTE5569
NTE5571
NTE5567, NTE5568, NTE5569
NTE5571
NTE5567, NTE5568, NTE5569
NTE5571
(V
(Linear to 100% rated V
(Linear to 67% rated V
Junction−to−Case (DC Operation), R
Case−to−Heatsink (Mounting Surface Smooth, Flat, and Greased), R
does not exceed 20A/μs.
DM
NTE5567, NTE5568
NTE5569, NTE5571
2
√t for Fusing (t = 0.1 to 10ms, No Voltage Reapplied), I
= Rated V
DM
TM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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= Rated V
= 50A, Reapplied dv/dt = 20Vμs, dir/dt = −10A/μs, V
d
DRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
q
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
, Gate Pulse = 20V, 15Ω, t
J
DRM
= +25°C, Anode Supply 22V, Resistive Load, Initial I
DRM
pk
p
DRM
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
≤ 5ms), P
, DC Resistive Circuit, Gate Pulse = 10V, 15Ω Source, t
= 157A, T
p
)
GM
)
≤ 5ms.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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GM
DRM
DRM
G(AV)
GM
J
J
GM
thJC
T(AV)
= +25°C), V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Anode−to−Cathode Applied), I
Anode−to−Cathode Applied), V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
< I < 20 x π x I
p
T(AV)
= 6μs, t
T(AV)
L
TM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
< I < π x I
< I < 20 x π x I
J
r
T(AV)
= 0.1μs ax., I
T(AV)
2
< I < π x I
T(AV)
√t
25 − 30 (2.8 − 3.4) lbf−in (Nm)
), V
R
= 50V)
), V
T(TO)2
J
GT
T(AV)
= +25°C), V
TM
T(TO)1
. . . . . . . . . . . . . .
thCS
GD
GD
T(AV)
= (2x Rated di/dt) A)
T
), V
= 2A), I
. . . . . . . . . .
. . . . . . . . . . .
), r
. . . . . . .
T(TO)2
−40° to +125°C
−40° to +125°C
t1
GT
p
101.8KA
H
72.1KA
= 20μs)
.
. . .
0.35K/W
0.25K/W
200A/μs
100A/μs
200V/μs
500V/μs
4.08mΩ
4.78mΩ
3.34mΩ
3.97mΩ
200mA
400mA
5.0mA
110μs
0.94V
1.02V
1.08V
1.17V
1.60V
1.78V
50mA
0.9μs
2.5W
10W
2.5A
2.5V
0.2V
20V
10V
2
2
√s
√s