NTE5511 NTE ELECTRONICS, NTE5511 Datasheet - Page 2

• Manufacturer Part Number: NTE5511
• Description: SILICON CONTROLLED RECTIFIER,200V V(DRM),5A I(T),TO-66
• Manufacturer: NTE ELECTRONICS

Electrical Characteristics: (At Maximum Ratings, T
Forward Breakover Voltage
Peak Blocking Forward Current
Peak Blocking Reverse Current
Forward Voltage Drop
DC Gate–Trigger Current
DC Gate–Trigger Voltage
Holding Current
Critical Rate of Applied Forward Voltage
Turn–On Time
Turn–Off Time
Thermal Resistance, Junction–to–Case
NTE5512
NTE5513
NTE5512
NTE5513
NTE5512
NTE5513
NTE5511
NTE5511
NTE5511
(Delay Time + Rise Time)
(Reverse Recovery Time + Gate
Recovery Time)
Parameter
.062 (1.57)
.145 (3.7) R Max
.147 (3.75) Dia
(2 Places)
.031 (0.78) Dia
Symbol
I
I
v
R
RBOM
dv/dt
FBOM
I
V
I
Hold
BOO
t
t
v
GT
on
off
GT
F
JC
Anode/Case
.580 (14.7)
T
V
V
V
V
V
V
I
V
T
V
I
i
dv
I
F
.485 (12.3)
.960 (24.3)
F
GT
GT
C
FB
C
FBO
FBO
FBO
RBO
RBO
RBO
FB
= 2A, 50 s pulse width,
= 30A
FB
= +100 C
= +100 C
Dia
= 200mA, 0.1 s rise time
= 200mA, T
= v
= v
/dt = 20V/ s, di
= 200V
= 400V
= 600V
= 200V
= 400V
= 600V
BOO
BOO
Test Conditions
C
.360 (9.14)
(min), exponential rise,
(min), i
= +25 C unless otherwise specified)
Min
C
T
T
Cathode
= +75 C
C
C
F
r
= +100 C
= +100 C
/dt = 30A/ s,
Gate
= 4.5A,
(5.08)
.200
.295 (7.5)
0.75
Min
200
400
600
10
–
–
–
–
–
–
–
–
–
–
–
–
0.10
0.20
0.40
0.05
0.10
0.20
2.15
Typ
200
1.2
1.5
10
15
–
–
–
8
–
Max
0.75
2.80
1.5
3.0
4.0
1.5
2.0
2.0
15
20
50
–
–
–
–
–
4
Unit
V/ s
mA
mA
mA
mA
mA
mA
mA
mA
C/W
V
V
V
V
V
s
s