NTE5498 NTE ELECTRONICS, NTE5498 Datasheet - Page 2
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NTE5498
Manufacturer Part Number
NTE5498
Description
SILICON CONTROLLED RECTIFIER,400V V(DRM),7.6A I(T),TO-220AB
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE5498.pdf
(2 pages)
Electrical Characteristics (Cont’d): (T
Holding Current
Latching Current
Critical Rate of Voltage Rise
Critical Rate of Current Rise
Gate Controlled Delay Time
Commutated Turn−Off Time
Parameter
.147 (3.75)
.070 (1.78) Max
Dia Max
Symbol
Cathode
dv/dt
di/dt
.100 (2.54)
t
I
I
t
gd
H
L
q
R
R
V
I
I
V
T
G
G
C
D
D
GK
GK
= 50mA, di
= 50mA, di
= +85°C
= .67 x V
= .67 x V
A
= 1kΩ
= 1kΩ
= +25°C unless otherwise specified)
.420 (10.67)
Max
DRM
DRM
Test Conditions
G
G
Anode
/dt = 0.5A/μs, T
/dt = 0.5A/μs
, R
, V
R
GK
= 35V, I
= 1kΩ, T
.250 (6.35)
Max
Gate
Anode
T
J
.110 (2.79)
= I
J
= +125°C
(12.7)
(12.7)
= +125°C 100
.500
Max
.500
T(AV)
Min
,
Min Typ Max
100
−
−
−
−
−
−
−
−
−
−
500
40
30
50
−
−
Unit
V/μs
A/μs
mA
mA
μs
ns