NTE5440 NTE ELECTRONICS, NTE5440 Datasheet
NTE5440
Manufacturer Part Number
NTE5440
Description
SILICON CONTROLLED RECTIFIER,700V V(DRM),10A I(T),SOT-186
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE5440.pdf
(2 pages)
Specifications of NTE5440
Rohs Compliant
YES
Applications:
D Motor Control
D Overvoltage Crowbar Protection
D Capacitive Discharge Ignition
D Voltage Regulation
D Welding Equipment
D Capacitive Filter Soft−Start (Inrush Current Control)
Absolute Maximum Ratings:
Repetitive Peak Voltages, V
RMS On−State Current (Full Sine Wave, T
Average On−State Current (T
Non−Repetitive Surge Peak On−State Current (Full Cycle, T
I
Critical Rate of Rise of On−State Current (I
Peak Gate Current (t
Average Gate Power Dissipation (T
Maximum Peak Reverse Gate Voltage, V
Isolation Voltage, V
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction−to−Case, R
Thermal Resistance, Junction−to−Ambient, R
Electrical Characteristics: (T
2
Gate−Trigger Current
Gate−Trigger Voltage
Voltage that will not
Holding Current
t Value for Fusing (t
Trigger any Device
F = 50Hz
F = 60Hz
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ISO
p
p
= 20μs, T
= 10ms), I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Controlled Rectifier (SCR)
800V, 12A, TO220 Isolated Tab
DRM
Symbol
C
V
V
I
stg
A
GT
I
= +95°C), I
GD
GT
H
, V
J
2
= +25°C unless otherwise specified)
= +125°C), I
t
RRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +125°C), P
V
V
V
I
T
D
D
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 500mA, Gate Open
= 12V, R
= 12V, R
= 800V, R
RGM
J
thJC
T(AV)
C
NTE5440
G
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +95°C), I
= 2 x I
thJA
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
L
L
Test Conditions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
L
= 30Ω
= 30Ω
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 3.3kΩ, T
G(AV)
GT
, t
r
T(RMS)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
< 100ns, T
J
= +125°C
J
Initial = +25°C), I
. . . . . . . . . . . . . . . . . . . . . . . . . . .
J
= +125°C), di/dt
Min
200
−
−
−
TSM
Typ
−
−
−
−
−40° to +125°C
−40° to +150°C
. . .
Max
1.5
25
40
−
2500V
100A/μs
2.1°C/W
60°C/W
Rev. 9−09
60A
Unit
800V
100A
120A
mA
mV
mA
V
12A
10A
1W
rms
4A
5V
2
s
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NTE5440 Summary of contents
Page 1
... Storage Temperature Range, T Thermal Resistance, Junction−to−Case, R Thermal Resistance, Junction−to−Ambient, R Electrical Characteristics: (T Parameter Gate−Trigger Current Gate−Trigger Voltage Voltage that will not Trigger any Device Holding Current NTE5440 800V, 12A, TO220 Isolated Tab , DRM RRM = +95°C +95°C ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Latching Current Rate of Rise of Off−State Voltage that will not Trigger any Device On−State Voltage Off−State Current Reverse Current .153 (3.89) Dia Max .037 (0.94) Max Cathode .100 (2.54) = +25°C unless otherwise specified) ...