NTE5424 NTE ELECTRONICS, NTE5424 Datasheet
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NTE5424
Manufacturer Part Number
NTE5424
Description
SILICON CONTROLLED RECTIFIER,400V V(DRM),4.7A I(T),TO-220
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE5424.pdf
(2 pages)
Description:
The NTE5424 is a silicon controlled rectifier (SCR) in a TO220 type package designed for high−speed
switching applications such as power inverters, switching regulators, and high−current pulse applica-
tions. This device features fast turn−off, high dv/dt, and high di/dt characteristics and may be used
at frequencies up to 25kHz.
Features:
D Fast Turn−Off Time
D High di/dt and dv/dt Capabilities
D Shorted−Emitter Gate−Cathode Construction
D Low Thermal Resistance
D Center−Gate Construction
Absolute Maximum Ratings:
Repetitive Peak Off−State Voltage (Gate Open, Note 1), V
Repetitive Peak Reverse Voltage (Gate Open, Note 1), V
RMS On−State Current (T
Average On−State Current (T
Peak Surge (Non−Repetitive) On−State Current (One Cycle), I
Peak Forward Gate Power Dissipation (10μs max, Note 2), P
Peak Reverse Gate Power Dissipation (10μs max, Note 2), P
Average Gate Power Dissipation (10ms max, Note 2), P
Rate of Change of On−State Current V
Fusing Current (T
Operating Case Temperature Range, T
Storage Temperature Range, T
Lead Temperature (During Soldering, 10sec max), T
Thermal Resistance, Junction−to−Case, R
Note 1. These values do not apply if there is a positive gate signal. Gate must be open or negatively
Note 2. Any product of gate current and gate voltage which results in a gate power less than the max-
60Hz Sinusoidal
50Hz Sinusoidal
biased.
imum is permitted.
C
= +60°C, 8.3ms), I
for TV Power Supply Switching, TO220
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Controlled Rectifier (SCR)
C
= +60°C, t
C
stg
= +60°C, t
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
1
DM
t
C
/t
2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 0.5), I
= 400V, I
thJC
/t
NTE5424
2
= 0.5), I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T(RMS)
GT
L
T(AV)
= 500mA, t
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
G(AV)
RRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GM
RGM
. . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . .
TSM
. . . . . . . . . . . . . . . . . . . . . . . . . .
r
. . . . . . . . . . . . . . . . . . . . . . . .
= 0.5μs), di/dt
. . . . . . . . . . . . . . . . . . . . . . .
. . . . . . .
−40° to +100°C
−40° to +150°C
2.2°C/W
200A/μs
500mW
+225°C
26A
400V
400V
5.0A
3.2A
13W
13W
80A
75A
2
s
Related parts for NTE5424
NTE5424 Summary of contents
Page 1
... TV Power Supply Switching, TO220 Description: The NTE5424 is a silicon controlled rectifier (SCR TO220 type package designed for high−speed switching applications such as power inverters, switching regulators, and high−current pulse applica- tions. This device features fast turn−off, high dv/dt, and high di/dt characteristics and may be used at frequencies up to 25kHz ...
Page 2
Parameter Peak Forward Blocking Current Peak Reverse Blocking Current Forward ON Voltage Gate Trigger Current, Continuous DC Gate Trigger Voltage, Continuous DC DC Holding Current Rate of Rise of Off−State Voltage Turn−On Time Circuit Commutated Turn−Off Time .147 (3.75) Dia ...