NTE5417 NTE ELECTRONICS, NTE5417 Datasheet
NTE5417
Manufacturer Part Number
NTE5417
Description
SILICON CONTROLLED RECTIFIER,200V V(DRM),10A I(T),TO-220
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE5417.pdf
(2 pages)
Specifications of NTE5417
Rohs Compliant
YES
Absolute Maximum Ratings:
Repetitive Peak Reverse Voltage (T
Repetitive Peak Off−State Voltage (T
RMS On−State Current (T
Peak Surge (Non−Repetitive) On−State Current (One Cycle at 50 or 60Hz), I
Peak Gate−Trigger Current (3μs Max), I
Peak Gate−Power Dissipation (I
Average Gate Power Dissipation, P
Operating Temperature Range, T
Storage Temperature Range, T
Typical Thermal Resistance, Junction−to−Case, R
Electrical Characteristics: (T
Peak Off−State Current
Maximum Peak On−State Voltage
DC Holding Current
DC Gate−Trigger Current
DC Gate−Trigger Voltage
Gate Controlled Turn−On Time
Critical Rate of Off−State Voltage
NTE5417
NTE5418
NTE5419
NTE5417
NTE5418
NTE5419
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Controlled Rectifier (SCR)
C
= +80°C, Conduction Angle of 180°), I
stg
C
GT
10 Amp, TO220 Isolated
NTE5417 thru NTE5419
Symbol
opr
= +25°C unless otherwise specified)
(critical)
I
dv/dt
I
I
HOLD
V
V
RRM
DRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
≤ I
G(AV)
t
GT
C
TM
GT
gt
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GTM
= +110°C), V
= +110°C), V
GTM
), P
V
T
I
Gate Open
V
V
I
Gate Open, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
GT
C
RRM
D
D
= 10A
= +110°C
= 6VDC, R
= 6VDC, R
= 100mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GM
= Max, V
Test Conditions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
RRM
DRM
C
L
L
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DRM
= +100°C
= 60Ω
= 60Ω
= Max,
T(RMS)
Min
. . . . . . . . . . . . . . . . . .
−
−
−
−
−
−
−
−
TSM
Typ
200
2.5
−
−
−
−
−
−
. . . . . . . . . .
−40° to +150°C
−40° to +110°C
Max
0.5
0.5
1.8
1.5
30
25
−
−
2.5°C/W
500mW
Unit
V/μs
mA
mA
mA
mA
200V
400V
600V
200V
400V
600V
100A
μs
V
V
16W
10A
1A
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NTE5417 Summary of contents
Page 1
... Parameter Peak Off−State Current Maximum Peak On−State Voltage DC Holding Current DC Gate−Trigger Current DC Gate−Trigger Voltage Gate Controlled Turn−On Time Critical Rate of Off−State Voltage NTE5417 thru NTE5419 10 Amp, TO220 Isolated = +110°C RRM = +110°C DRM = +80°C, Conduction Angle of 180°), I ...
Page 2
Dia Max .070 (1.78) Max Cathode .100 (2.54) Max .110 (2.79) Isolated .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min Gate Anode ...